micro LEDdisplayAR/VR/MREver-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays, from micro-electronic displays to large video walls. InGaN nanowires, with features like high ...
12月29日,中佛罗里达大学吴诗聪教授带领的团队,在期刊 Opto-Electronic Science 发表题为 Directional high-efficiency nanowire LEDs with reduced angular color shift for AR and VR displays 的论文。
Multi-wavelength nanowire micro-LEDs for future high speed optical communicationwww.oejournal.org/article/doi/10.29026/oea.2024.240011 Ayush Pandey, Zetian Mi 米泽田 Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA Opto-Electronic Advances,...
One of the key processes in microdisplay fabrication is the wafer-scale transfer of the micro/nanoLED structures onto another suitable carrier, e.g., a CMOS silicon wafer or a flexible metal foil. Flexible metal foils are particularly useful for wearable optoelectronic devices such as flexible di...
chalcogenides(eg, ZnSe), and semiconducting alloys (eg, In2Te3), respectively, exhibit an intermediate band gap (1.5–3 eV) or anarrow bandgap (<1.5 eV). Tunable band gaps led to the assembly ofphotodetectornanodevices, absorbing across the ultraviolet, visible, and infrared portion of the ...
The further shrinkage of GaN-based LEDs to submicron sizes (<1 µm) has been demonstrated by forming them as core-shell, disc-in, and dot-in indium gallium nitride (InGaN)/GaN nanowire LEDs (nanoLEDs) in a bottom–up approach; these devices are known as nanoLEDs11,17,18,19. InGa...
The nanowire LED structure was Electrically Injected Lasers with Ternary AlGaN Nanowires Compared to conventional AlGaN multiple quantum well lasers, AlGaN nanowire lasers are much less explored. Optically pumped lasers based on GaN nanowires, including random lasers, Fabry–Perot lasers, and plasmonic ...
As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ,0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. ...
关键词: 2D LED devices GaN NW growth metal-organic vapor phase epitaxy (MOVPE) radial GaN nanowire-based LEDs vapor-liquid-solid (VLS) 出版时间: 2014/08/08 收藏 引用 批量引用 报错 分享 全部来源 求助全文 Wiley 相似文献 引证文献 同作者Radial GaN Nanowire‐Based LEDs S Li - John Wiley &...
I–Vcurve of the nanowire/PDMS membrane LED Full size image The EL spectra of the NW/PDMS membrane LEDs were measured at room temperature using the HR460 spectrometer equipped with a CCD camera. The EL spectra under different applied biases are presented in Fig.5. The EL spectra exhibit two...