NAND TYPE FLASH MEMORYPROBLEM TO BE SOLVED: To provide a NAND type flash memory capable of more suppressing a memory cell transistor from being erroneously written in.SATO ATSUYOSHI佐 藤 敦 祥ARAI FUMITAKA荒 井 史 隆
According to one embodiment, a NAND type flash memory includes a first transfer transistor disposed between first and second memory planes, the first potential transfer terminal of the first transfer transistor being commonly connected to a first word line in the first NAND block and a second word...
The invention provides an NAND type flash memory and a programming method thereof, and reduction of reliability caused by data rewrite can be limited. The programming method of the NAND type flash memory comprises that when a storage block is in a programming mode, a plurality of pages in the...
A NAND-type flash memory device including a memory cell array having a plurality of memory blocks is provided. An example NAND-type flash memory device includes a status cell array which has a plurality of status cells and stores data indicating erase/program statuses of the memory blocks, a ...
There are two types of flash memory. NOR Type flash memory and NAND Type flash memory. A Flash memory is made up of FGMOS or FGMOSFETs (Floating Gate Metal Oxide Field Effect Transistors). Each FGMOS is an electronic component that can store either 0 or 1. This is why these transistors...
A NAND-type flash memory device is provided to sufficiently guarantee an interval between the edge cell of a cell string and a source/drain select line in an active region by including a source/drain select line of an unevenness type. A plurality of isolation layers(12) are formed in a pr...
NAND闪存(NAND Flash Memory) 一种半导体单元串联排列的闪存。 由于NAND闪存是垂直排列单元(即存储单位)的结构,因此可以在狭小的面积上制作很多单元,从而实现大容量存储。根据半导体芯片内部电子电路的形态,闪存分为串联连接的NAND闪存和并联连接的NOR闪存。 NAND闪存易于增加容量,改写速度快,而NOR闪存读取速度快。此外,...
NAND-type flash memory device and method of operating the same A NAND-type flash memory device and a method of operating the same are provided. The NAND-type flash memory device includes a cell array area, which is composed of a plurality of cell blocks sharing m bit lines, and a row ...
原装进口 JR28F064M29EWHA 贴片TSOP48 FLASHNAND闪存储存器 深圳市泓顺芯科技有限公司1年 月均发货速度:暂无记录 广东 深圳市 ¥7.00 MT29F1G08ABAEAWP/E TSOP-48封装 闪存NAND存储芯片 Flash存储器 深圳市芯皇电子有限公司3年 月均发货速度:暂无记录 ...
TSOP48 NAND Flash Memory 256MB 全 深圳市福田区瑞泰芯电子商行 9年 月均发货速度: 暂无记录 广东 深圳市福田区 ¥17.50 TC58NVG1S3EBAI4 BGA63球 NAND Flash Memory 256MB 原装闪存内存 深圳市昊捷微电子有限公司 3年 月均发货速度: 暂无记录 广东 深圳市 ¥11.00 全新TH58NVG1S3A...