Symbol Capacitance(1) Parameter Test condition Typ Max CIN Input capacitance CI/O Input/output capacitance(2) VIN = 0 V VIL = 0 V 1. TA = 25 °C, f = 1 MHz. CIN and CI/O are not 100% tested. 2. Input/output capacitances double in stacked devices. 10 10 Units V V °C °...
2. Input/output capacitances double in stacked devices. 41/60 DC and AC parameters NAND01G-B2B, NAND02G-B2C Figure 18. Equivalent testing circuit for AC characteristics measurement VDD 2Rref NAND flash CL 2Rref GND GND Ai11085 42/60 NAND01G-B2B, NAND02G-B2C Table 22. Symbol DC ...
Input/output capacitances double in stacked devices 46/64 NAND01G-B, NAND02G-B Table 22. Symbol IDD1 IDD2 IDD3 IDD5 ILI ILO VIH VIL VOH VOL IOL (RB) VLKO Operating Current DC And AC parameters DC Characteristics, 1.8V Devices Parameter Sequential Read Program Erase Standby Current (...
Allen M. Peterson, in Control and Dynamic Systems, 1995 8 Exclusive OR Gate Exclusive OR (XOR) gate is an interesting unit to be designed using CMOS circuits. Its behavior specification can be given as follows: The symbol for an XOR gate is shown in Figure 10. There are many different ...
$const <name> <value>: inserts the symbol <name> into the symbole table with the specified integer <value> $call : pushes the return address at the top of the stack then performs a jump to the specified label $return: pop the return address at the top of the stack and jumps to it...
Symbol 1.8V Devices Parameter 3V Unit Devices Address Latch Low to Write Enable Low tALS AL Setup time Min 0 0 ns CL Setup time Min 0 0 ns Address Latch High to Write Enable Low Command Latch High to Write Enable Low tCLS Command Latch Low to Write Enable Low tDVWH tDS Data Valid ...
Symbol 1.8V Devices Parameter 3V Unit Devices Address Latch Low to Write Enable Low tALS AL Setup time Min 0 0 ns CL Setup time Min 0 0 ns Address Latch High to Write Enable Low Command Latch High to Write Enable Low tCLS Command Latch Low to Write Enable Low tDVWH tDS Data Valid ...
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