A two-phase non-overlapping clock generator (12) generating a sampling signal (20) utilizing a three transistor NAND gate (50). The NAND gate of the present invention eliminates one large PMOSFET (46), and has one NMOSFET (52) driven by the other phase and having its source grounded. ...
大致意思是,NAND string边缘会产生热载流子,这个边缘应该是最下面的WL(靠近SSL),热载流子的存在会导致channel电压变低,从而影响第一根WL program operation,这是program disturb的一种情况,因此一般把前两根WL作为dummy WL(个人经验)。 (引文[2][3]给出的解释:Channel材料的不同导致3D NAND select transistor(SSL)...
NAND logic gate comprises quantum wire transistor controlled by side gatesdoi:DE102004056231The NAND logic gate comprises a quantum wire controlled by side gates. The design exploits asymmetry in gate effectiveness.FORCHEL ALFREDWORSCHECH LUKAS
This would be the most efficient XOR circuit in terms of transistor count if “nand” gate, “nor” gate, and inverter were the lowest level units and all other logic circuits had to be built upon them. Sign in to download full-size image Figure 12. XOR gate circuit-b (16 T) (c)...
CMOS-NAND gate circuit using four-terminal double insulated gate field effect transistorPROBLEM TO BE SOLVED: To provide a CMOS circuit for compatibly ... 関川 敏弘,小池 帆平 被引量: 0发表: 2011年 Researchers Submit Patent Application, 'Apparatus, System And Method For Energy Spread Ion Beam...
Novel NAND DRAM with Surrounding Gate Transistor (SGT)-Type Gain CellNovel NAND DRAM with Surrounding Gate Transistor (SGT)-Type Gain CellSurrounding gate transistor (SGT)SGT-type gain cellNAND DRAMLow-voltage operationA novel NAND DRAM with SGT-type gain cell is proposed. This SGT-type gain ...
1-Sketch a 2-input NAND gate with transistor widths chosen to achieve effective rise and fall resistances equal to a unit inverter. Compute the rising and falling propagation delays of the NOR gate driving h identical NOR gates using the Elmore d...
Finally, we reviewed the path to reduce the channel length of the select gate transistor in conjunction with the role of dummy cells. Keywords –3D NAND memory, program/erase operation, program disturb, self-boosting effect I. INTRODUCTION Demand for aggressive bit density scalin...
www.ti.com DBV0006A EXAMPLE BOARD LAYOUT SOT-23 - 1.45 mm max height SMALL OUTLINE TRANSISTOR 6X (1.1) 1 6X (0.6) PKG 2X (0.95) 2 3 (R0.05) TYP (2.6) 6 SYMM 5 4 LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:15X SOLDER MASK OPENING METAL METAL UNDER SOLDER MASK SOLDER MASK ...
Novel ultra high density flash memory with a stacked-surrounding gate transistor (S-SGT) structured cell In order to overcome the limitation of cell area of 4F/sup 2/ per bit in conventional NAND flash memory cells, stacked-surrounding gate transistor (S-SGT) ... T Endoh,K Kinoshita,T Ta...