XOR gate symbol (a) XOR-A From the above behavior specification, we can obtain a logic relationship of the output with the inputs as follows: Out=In1⋅In2¯+In1¯⋅In2 A direct implementation of this logic relationship requires 22 transistors as shown in Figure 11. Because logic ...
TC58NVG1S3HTA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3H is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as...
Sometimes we have a tendency to make things more complicated than they need to be. All we have to do in this case is remember that an AND gate is really formed from a NAND gate followed by a NOT gate (similarly, an OR gate consists of a NOR gate followed by a NOT gate). This me...
DC Characteristics Symbol Parameter Test Conditions Min. Typical Max. Unit Notes VIL Input low level -0.3 0.2VCC V VIH VOL VOH ISB1 ISB2 ICC0 ICC1 ICC2 Input high level 0.8VCC Output low voltage Output high voltage IOL= 2.1mA, VCC= VCC Min. IOH= -400uA, VCC= VCC Min. VCC-0.2V ...
TOSHIBA CONFIDENTIAL TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND ...