A kind of driving circuit that NAND gate latches and the shift register that NAND gate latches. The driving circuit that the NAND gate latches includes the shift register circuit (10) of multiple cascade settings, each shift register circuit includes clock control transmission circuit (11) and...
Fig. 7 NOR gate 和 NAND Gate 这里逻辑门电路,我的理解方法是从基本gate入手,OR Gate 是并联概念,AND gate 是串联概念,这刚好和其布尔逻辑对应,NOR是OR的非集,NAND 是AND的非集,在电路中他们的不同体现在输出端不同,OR gate还有AND gate的输出端在漏极(理解为后面),NOR gate以及NAND gate的输出端在源...
Program的部分不太理解,既然Program操作是by page,那就应该一根WL上的Cell一起被program,为何还要有selected和unselected的差别?通过self boosting实现inhibit的操作的意思是把channel的电压通过boosting的方式提高到接近Vpass的大小,这样Vcg(Vpgm)-Vchannel的压差很小,电子不会被拉到floating gate中去? 以上问题有待澄清,...
与非门(英语:NAND gate)是数字电路的一种基本逻辑电路。若当输入均为高电平(1),则输出为低电平(0);若输入中至少有一个为低电平(0),则输出为高电平(1)。与非门可以看作是与门和非门的叠加。 与非门是与门和非门的结合,先进行与运算,再进行非运算。与非运算输入要求有两个,如果输入都用0和1表示的话,那么...
Transparent latch timing Latches may be placed at any point in the half-cycle; the only constraint is that there must be one latch in each half-cycle. Many designers think of latches at the end of the half-cycle. In Section 1.3, we illustrated latches in the middle of the half-cycle...
74AUP1G00 低功耗CMOS双输入正式NAND门数据手册说明书 74AUP1G00 Document number: DS35145 Rev 6 - 2 1 of 16 www.diodes.com February 2015 © Diodes Incorporated SINGLE 2 INPUT POSITIVE NAND GATE Description The Advanced Ultra Low Power (AUP) CMOS logic family is designed for low power ...
NL17SH00 高速 CMOS 双输入 NAND 门数据手册说明书 © Semiconductor Components Industries, LLC, 2011 August, 2011 − Rev. 1 1 Publication Order Number:NL17SH00/D NL17SH00 Single 2-Input NAND Gate The NL17SH00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon ...
目前最流行的Flash存储单元基于浮栅(Floating Gate, FG)技术,其截面如图2.1所示。MOS晶体管由两个重叠栅极而不是一个单独的栅极构成:第一个栅极完全被氧化物包围,而第二个栅极被接触形成栅极终端。孤立的栅极变成了电子的“陷阱”,使得电子能在其中长期保留。从浮栅中注入和去除电子的操作分别称为编程(program)和擦...
Common NAND gate applications Design an alarm or tamper circuit with an S-R latch Critical systems that need to flag and address events use alarm circuits. This video presents a simple set-reset (S-R) latching solution designed to avoid missing alarm trigger events. ...
TA = 25°C • Typical VOHV (output VOH undershoot) > 2V at VCC = 3.3V, TA = 25°C • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000V human-body model (A114-A) 2 Description This triple 3-input positive-NAND gate is designed for...