In a triple-well NMOSFET, a deep n+ well (DNW) is buried in the substrate to isolate the substrate noise. The presence of this deep n+ well leads to changes in single-event transient effects compared to bulk NMOSFET. In space, a single cosmic particle can deposit enough charge in the...
SS symmetry Article The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET Jizuo Zhang 1,2, Jianjun Chen 1,*, Pengcheng Huang 1, Shouping Li 1 and Liang Fang 1 1 College of Computer, National University of Defense Technology, Changsha 410073, Hunan, China;...