An anti-latching N-type silicon on insulator lateral insulated gate bipolar transistor comprising: N-type substrate with a buried oxide on the N-type substrate with N-type epitaxial layer on the buried oxide, the N-type Internal N-type epitaxial layer has a buffer well and P-type body ...
参考文献: [1]Ryu K, Upadhyaya A, Song H J, et al. Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells[J]. Applied Physics Letters, 2012, 101(7): 073902. [2]J. Schmidt, A. G. Aberle, and R. Hezel, in Proceedings of the 26th IEEE...
and the intrinsic semiconductor is configured between the P-type semiconductor and the N-type semiconductor. 所述本征半导体配置于所述P型半导体与所述N型半导体之间。 ip.com 10. the amorphous silicon film layer and the N type silicon pervasion layer form a heterogeneity height node structure. 该非晶...
140 POLY SILICON 复晶硅 SILICON 是IC 制造的主要原料之一。通常其结构都是单 晶(单一方向的晶体)。而本名词也是SILICON,只是其结构是复晶结构。及其结晶的结构 是 多方向的,而非单一方向。POLY SILICON 通常用低压化学气相沉积的方法沉积而得。 其主要用途在作MOS 的闸极极单元的接连。 141 POX 聚醯胺膜含...
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TheNetherlandsABSTRACTAluminum-dopedp-type(Al-p+)siliconemittersfabricatedbymeansofscreen-printingandfiringareeffectivelypassivatedbyplasma-enhancedchemical-vapordeposited(PECVD)amorphoussilicon(a-Si)andatomic-layer-deposited(ALD)aluminumoxide(Al2O3)aswellasAl2O3/SiNxstacks,wherethesiliconnitride(SiNx)layeris...
Material : Single crystal silicon (CZ) Orientation : ï¼100) Type/Dopant : n/phosphoric Resistivity : <50 ohm-cm Wafer Size : 4 inch (100mm +/- 0.5 mm) Thickness : 525 micron +/- 25 micron Oxide Thickness: 1000aa (100nm) ...
The importance of knowing optical constants in the case of silicon points out to the technologically important applications of this knowledge, these applications include: (1) the determination of epilayer thickness, (2) the losses in all-silicon integrated optical devices, (3) silicon-wafer thermome...
The utility model discloses an N-type crystalline silicon battery. The backlight side of an N-type crystalline silicon layer is sequentially provided with a tunneling passivation layer, a (P+)-type crystalline silicon layer and a back electrode, so that a (P+N)-type transmitting electrode ...
Material : Single crystal silicon (CZ) Orientation : ï¼100) Type/Dopant : n/phosphoric Resistivity : <50 ohm-cm Wafer Size : 4 inch (100mm +/- 0.5 mm) Thickness : 525 micron +/- 25 micron Oxide Thickness: 1000aa (100nm) ...