In the second chapter, general material and transport properties, advantages, and theoretical electrical and thermal limits of III-N materials are presented. Further, the state-of-the-art for nitride-based substrates, materials, electronic devices, and c
Department of Electronics and Communication Engineering, Institute of Engineering & Technology, Deen Dayal Upadhyaya Gorakhpur University, Gorakhpur, IndiaChauhan, R. K.Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, IndiaBajpai, R. S....
4.Recessed Mg-doped P-type In0.2Ga0.8N cap Gate AlGaN/GaN/AlGaN DH-HEMT for high breakdown and power electronics applications and spring 机译:嵌入式Mg掺杂的P型In0.2Ga0.8N帽栅AlGaN / GaN / AlGaN DH-HEMT,适用于高击穿和功率电子应用 A Mohanbabu ,N Mohankumar 2016 5.Electron Microscopy...
KONINKLIJKE PHILIPS ELECTRONICS N.V. Primary Class: 257/686 Other Classes: 257/E23.177 International Classes: H01L23/538; (IPC1-7): H01L23/02 View Patent Images: Download PDF 20040089933 Related US Applications: 20110241095NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME...
In an embodiment of an ironing board according to the invention the ironing board is arranged for housing at least one of a water tank 125 or a boiler 127 or a power supply (FIG. 14). The boiler is provided with a hose, which is connectable to an iron having an inlet (not shown)....
42. Gopalakrishnan, M., Srikesh, G., Mohan, A. & Arivazhagan, performance supercapacitor electrode applications. Appl. Surf. SVc.iI.n4 0s3it,u57sy8n–t5h8e3si(s20o1f 7C).o3O4/graphite nanocomposite for high- 43. Tao, L. et al. Supercapacitor electrode with Nanoscale Res. ...
Nitrogen and sulfur co-doped hierarchical porous carbon has gained enormous attention in energy storage field owing to its high capacitance and chemical stability. Herein, nitrogen and sulfur co-doped hierarchical porous carbon derived from ginkgo leaves is fabricated via carbonization followed by a faci...
R. Mohan Rao, assigned to Texan Instruments, the next step in the process is to subject the slice to a heat treatment or annealling step, during which the slice is maintained at a temperature of about 1000° C. for about 2 hours in an inert atmosphere, preferably nitrogen. This step ...
School of Electronics Engineering, Vellore Institute of Technology, Chennai, IndiaMohanbabu, A.ECE Department, SRM Institute of Science and Technology, Ramapuram, Chennai, IndiaMurugapandiyan, P.ECE Department, Anil Neerukonda Institute of Technology and Sciences: Visakhapatnam, Visakhapatnam, India...
Thirumalai, C.; Mohan, S.; Srivastava, G. An Efficient Public Key Secure Scheme for Cloud and IoT Security. Comput. Commun. 2020, 150, 634–643. [Google Scholar] [CrossRef] Deverajan, G.G.; Muthukumaran, V.; Hsu, C.H.; Karuppiah, M.; Chung, Y.C.; Chen, Y.H. Public key...