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Device applications of graphene such as ultrafast transistors and photodetectors benefit from the combination of both high-quality p- and n-doped components prepared in a large-scale manner with spatial control and seamless connection. Here we develop a
where <D2> is the deformation potential of the E2gmode, M is the atomic weight of carbon, ω0is the frequency of the G-band in perfect graphene, υFis the Fermi velocity of graphene and ΔEFis the shift of the Fermi level. The blue shift ofGpeak indicates n-type doping resulting fr...