产品名称:N沟道MOSFET,30V(D-S) 厂商:VISHAY 生产批号:10+PB 封装:SOT23-3 库存状态:有库存 库存量:8000 最低订购量:1 详细资料: 产品介绍 分享到: Si2306BDSN沟道MOSFET,30V(D-S)MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.16A; On-Resista...
GFC420 N Channel Power Mosfet . General Description: * Advanced Process Technology * Dynamic dV/dt Rating. * 150 Operating Temperature * Fast Switching * Fully Avalanche Rated. Mechanical Data: x 3.44mm Dimension 400 µm Thickness: Metallization: Al To
产品种类: 场效应管(MOSFET) RoHS: 是 晶体管极性: N-Channel 通道数量: 1Channel Vds-漏源极击穿电压: 100V Id-连续漏极电流: 36A RdsOn-漏源导通电阻: 26.5mOhms Pd-功率耗散: 92W 工作温度: -55℃~+175℃ 长度: 10mm 宽度: 4.4mm 高度: 15.65mm 单位重量: 2g 价格说明 价格...
Driver/receiver circuit including receiver circuit with p-channel MOSFET and N-channel MOSFETIn order to rapidly transmit a signal between circuit blocks which are located apart from each other, there is provided a driver circuit for outputting a suitable small amplitude signal and a receiver ...
VIADJ = VVCC INTEGRATED N-Channel MOSFET AND DRIVER RDS(on) FET ON-resistance IDRN-SW(off) VBOOT-UVLO FET leakage current Voltage where gate drive is disabled IDRN-SW = 200mA, VBOOT = 5 V, TJ = 25°C IDRN-SW = 200mA, VBOOT = 5 V, TJ = 150°C IDRN-SW = 200mA, VBOOT = ...
MOSFET's threshold voltage (VTH) must be greater than 0.8V and able to handle VGSvoltages up to 16V. The normal functional load current and the fault currents in the application must be within the Safe Operating Area (SOA) of the n-channel FET. The SOA ...
VIA-1 effects of hot-carrier trapping in n- and p-channel MOSFETs Detailed measurements of hot-carrier gate current and its trapping effects were studied on both n- and p-channel MOSFET's down to submicrometer channel len... KK Ng,GW Taylor - 《Electron Devices IEEE Transactions on》 被...
, Exit and/or Safety Lighting, Medical Lighting, Stage and Area Lighting • Agricultural, Marine, and Heavy Industry Lighting • High Contrast Shunt FET Dimming 3 Description The TPS92515 family of devices are compact monolithic switching regulators integrating a low resistance N-Channel MOSFET....
封装: SOT428 描述: MOSFET N-CH 60V 18A DPAK 数据手册:下载NTD18N06LT4G.pdf立即购买 数据手册 价格&库存 NTD18N06LT4G 数据手册 NTD18N06L, NTDV18N06L MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V Designed for low voltage, high speed switching applications in power supplie...
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reverse transfer capacitance (CRSS) and maximum output current requirement. The losses in the MOSFETs have two components: conduction loss and transition loss. For the upper and lower MOSFET, the ...