N Channel MOSFET Symbol The N channel MOSFET symbol is shown below. This MOSFET includes three terminals like source, drain and gate. For the n-channel mosfet, the arrow symbol direction is inward. So, the arrow symbol specifies the channel type like P-channel or N-channel. N Channel MOSFE...
2N7002KT N-Channel MOSFET 产品说明书
铁源电子 IRF7413PbF 高电压高功率 N-Channel 电源 MOSFET 数据手册说明书 HEXFET ® Power MOSFET SO-8
(A) 7.2 5.9 D Marking Code AB XX Lot Traceability and Date Code Part # Code G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed ...
LOW VOLTAGE MOSFET (N-CHANNEL) FEATURES Ultra low on-resistance:VDS=30V,RDS(ON)≤28mΩ@VGS=10V,ID=5.8A For PWM application For Load switch application Surface Mount device MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability ...
MOSFET – N‐Channel, POWERTRENCH) 40 V, 49 A, 2.2 mW FDMS8460 General Description This N−Channel MOSFET is produced using onsemi's advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features...
1NCE65T900D ，NCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent R DS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC ...
These devices are well suited for AC/DC power conversion Features- 11A, 650V, RDS(on) typ 330mΩ@VGS =10 V- Low gate charge ( typical 17.5nC)- High ruggedness- Fast switching- 100% avalanche tested- Improved dv/dt capabilitySymbol Parameter SLF65R380SS UnitsVDSS Drain-Source Voltage ...
2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET 说明书 2N7002T Document number: DS30301 Rev. 15 - 2 1 of 5 www.diodes.com August 2018 © Diodes Incorporated Product Summary Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (R DS(ON...
(Note 4) N-Channel MOSFET Symbol PD Rating 325 Unit mW Drain-Source Voltage Gate-Source Volltage TA=25℃ Continuous Drain Current TA=100℃ Pulsed Drain Current (Note 3) P-Channel MOSFET VDS VGS ID IDM 20 ±12 0.75 0.47 3 V V A A Drain-Source Voltage Gate-Source Volltage TA=25℃ ...