nchannel mosfet nchannel mosfet（nm）是一种新型的mosfet，它不同于传统的多沟道MOSFET，nm是单沟道的。企业名片 NCHANEL MOSFLET：1、什么是nm：nm是英文单词Non Channel Silicon Fields的缩写。即非通道硅半导体场效应器件。它是基于SiC材料制作的一种新型mosfet，其工作原理与传统的MOSFET相同，但结构上具有许多...
英飞凌 MOSFET——功率 MOSFET 产品开发中的易用性 Share 易于使用和易于设计是客户要求的主要特性。英飞凌作为值得信赖的顾问,始终将客户的成功作为产品开发的核心。 英飞凌 MOSFETs——适用于各种设计条件的质量 Share 质量第一。英飞凌是功率半导体行业的领导者,长期以来一直致力于为客户提供安全的选择和可靠的性能。
英飞凌 MOSFET——功率 MOSFET 产品开发中的易用性 Share 易于使用和易于设计是客户要求的主要特性。英飞凌作为值得信赖的顾问,始终将客户的成功作为产品开发的核心。 英飞凌 MOSFETs——适用于各种设计条件的质量 Share 质量第一。英飞凌是功率半导体行业的领导者,长期以来一直致力于为客户提供安全的选择和可靠的性能。
AO3420 20V N-Channel MOSFET 产品说明书
N-Channel 60V (D-S) MOSFET 数据手册说明书 N-Channel 60-V (D-S) MOSFET FEATURES •Halogen-free According to IEC 61249-2-21 Definition •Low Threshold: 2 V (typ.)•Low Input Capacitance: 25 pF •Fast Switching Speed: 25 ns •Low Input and Output Leakage •TrenchFET ® ...
40V 175℃ N-CHANNEL 增强模式 MOSFET 商品说明书 DMTH4004LK3 Document number: DS37792 Rev. 2 - 2 1 of 7 www.diodes.com December 2015 © Diodes Incorporated 40V 175°Product Summary Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain...
The working of n channel enhancement MOSFET is the same as enhancement p channel MOSFET except for the construction and operation. In this type of MOSFET, a p-type substrate that is lightly doped can form the device body. The source & drain regions are doped heavily with n-type impurities....
The threshold-based option of the block uses the Shichman and Hodges equations [1] for an insulated-gate field-effect transistor to represent an N-Channel MOSFET. The drain-source current, IDS, depends on the region of operation: In the off region (VGS < Vth), the drain-source current ...
N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET).MOSFETtransistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). Sometimes ...
VBsemi NCE3402-VB 是一款 N—Channel 沟道的场效应晶体管,具体参数如下: - 额定电压(VDS):30V - 额定电流(ID):6.5A - 静态漏极-源极电阻(RDS(ON)):30mΩ(在VGS=10V, VGS=20V时) - 阈值电压(Vth):1.2~2.2V 封装为 SOT23。 **应用简介:** ...