ManufacturerPart #DatasheetDescription Freescale Semiconductor...MW6S004NT1 496Kb/13PRF Power Field Effect Transistor NXP SemiconductorsMW6S004NT1 550Kb/13PRF Power Field Effect Transistor Rev. 4, 6/2009 Freescale Semiconductor...MW6S004NT1
MW6S004NT1;中文规格书,Datasheet资料 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.•Typical Two-...
下载MW6S004NT1下载 文件大小527.99 Kbytes 页12 Pages 制造商FREESCALE [Freescale Semiconductor, Inc] 网页http://www.freescale.com 标志 功能描述RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 1-2000 MHz, 4 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET ...
MW6S004NT1 Datasheet by NXP USA Inc. MW6S004NT1 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistor N-ChannelEnhancement-Mode Lateral MOSFET Designedfor Class A or Class AB base station applications with frequencies upto2000MHz.Suitableforanaloganddigitalmodulationandmulticarrier ...
MW6S004NT11RF Device DataFreescale SemiconductorRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for Class A or Class AB base station applications with frequenciesup to 2000 MHz. Suitable for analog and digital modulation
8RF Device DataFreescale SemiconductorMW6S004NT1f = 1930 MHzZo = 10 ΩZloadZsourcef = 1990 MHzf = 1930 MHz 数据表 search, datasheets, 电子元件和半导体, 集成电路, 二极管, 三端双向可控硅 和其他半导体的
RF MOSFET晶體管 HV6 1950MHZ 2W PLD1.5N 型號: MW6S004NT1 品牌: NXP / Freescale 交期: 5-8工作天 原廠包裝量: Datasheet 幣別(NTD)稅前單價/PCS 點擊查看即時庫存 1+NT$378.105 10+NT$346.71 25+NT$315.315 100+NT$283.5788 起訂量:1倍增量:1 ...
MW6S004NT1_07 DatasheetIC型号: MW6S004NT1_07 PDF描述: Freescale Semiconductor, Inc [RF Power Field Effect Transis... 文件大小: 496.38KB 芯片厂家: FREESCALE 阅览下载 纠错 0 扫码查看芯片数据手册 上传产品规格书 PDF预览 1 2 3 4 5 6 7 8 9 10 11 12 13 Freescale Semiconductor ...
Datasheet MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFETMW6S004NT1 Other 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 PinsMRFG35003N6AT1 AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application NotesMMT20303H ...
请参阅产品规格 制造商型号: MW6S004NT1 制造商: NXP(恩智浦) 产品类别: 晶体管-FET,MOSFET-射频 商品描述: FET RF 68V 1.96GHZ PLD-1.5 供货: 货期 工作日(7-10天) 渠道: digikey 服务: 锐单发货及售后,顺丰快递,在线客服 客服: 提示: