PURPOSE:To efficiently implant the carriers without spoiling quantum effect by increasing the thickness of well layers constituting an active layer gradually toward the center area of the active layer from the vicinities of the clad layers at both ends of the active layer, and further by setting ...
9月8日,中国科学院长春光学精密机械与物理研究所黎大兵研究员等组成的团队,在期刊 Photonics Research 发表题为 Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode 的论文。 Co-published by The Optical Society (OSA) and Chinese Laser Press (CLP...
InGaAs/GaAs multiple quantum well (MQW) structures with wells that consist of InAs/GaAs short-period strained-layer superlattices (SPSLS) have shown sharp ... D Yap,TC Hasenberg,TY Hsu,... - Integrated Photonics Research 被引量: 3发表: 1992年 Optimization of strained-layer In(x)Ga(1-x)...
Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metal–organic vapor-phase epitaxy in a simple and full III-N approach. The synthesis of such MQW-tubes is based on the growth of N-polar c-axis vertical...
The spectral response of back-surface-illuminated p-GaN-i-GaN/AlGaN multiplequantum well (MQW)-n-AlGaN ultraviolet (UV) photodetector is reported. The structure was grown by molecular-beam epitaxy on a c-plane sapphire substrate. A MQW is introduced into the active region of the device to en...
Merk, H.E. Senasack, "Modulating Retroreflector Using Multiple Quantum Well Technology",U.S. Patent No. 6,154,299, awarded November, 2000.US6154299 1998年6月15日 2000年11月28日 The United States Of America As Represented By The Secretary Of The Navy Modulating retroreflector using multiple...
Under an applied bias, both the real and imaginary parts of the complex refractive index of the quantum well are modulated. The observed red shift of the resonance indicates an increase of the real part of the refractive index. The modulation of the real part of the refractive index is ...
Strain-compensated multiple quantum well laser structures Semiconductor laser structures utilize strain-compensated multiple quantum wells as the laser gain medium to greatly increase the gain and substantially reduce mirror reflectivity constraints in long wavelength (1.3 and 1.55 &mgr;m) surf......
We report on the first room‐temperature operation of aluminum‐free In0.2Ga0.8As/GaAs/ In0.49Ga0.51P multiple‐quantum‐well lasers grown by gas‐source molecular beam epitaxy. These lasers have low threshold current densityJthof 177 A/cm2, high internal quantum efficiency of 91%, and low ...
Analyzing the unstable reason of GaN-based blue light LED peak wavelength,it was the quantum restrictionStark effect caused by the multi-quantum well area. 分析了引起GaN基蓝光LED峰值波长不稳定的原因,它是由多量子阱区内极化效应引起的量子限制斯塔克效应造成的。 2. To verify the direct-gap transiti...