Young Kue HongChang-Hee HongEun-Kyung SuhJeong Yong LeeJohn Wiley & Sons, Ltd.physica status solidi (b)C. S. Kim et al., "Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures," Phys. Status So- lidi-B, vol. 228, pp. 183-186, 2001....
1) multi-quantum wells(MQWs) 多量子阱(MQWs) 2) large quantity 多量 3) Multiple Quantum wells 多量子阱 1. Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering; 反应磁控溅射ZnO/MgO多量子阱的光致荧光光谱分析 ...
These compositionally asymmetrical multiquantum wells may thus be viewed as giant "quasimolecules" optimized for optimal nonlinearities in the mid infrared. Optical rectification as well as second harmonic generation have been measured in those structures using a continuous CO 2 laser. At 10.6 μm ...
Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells 来自 掌桥科研 喜欢 0 阅读量: 26 作者: M Nadir 摘要: A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped...
The photoluminescence spectra are consistent with radiative recombination of two-dimensional electrons and holes confined in the PbSe wells. In contrast to the PbTe-based multiquantum well structures on (111)BaF2 substrates, and as a consequence of the smaller ellipsoidal mass anisotropy of PbS and ...
(2000), Effect of Pits in InGaN/GaN Multi-Quantum Wells on the Strain and In Composition Segregation. phys. stat. sol. (a), 180: 81–84. doi: 10.1002/1521-396X(200007)180:1<81::AID-PSSA81>3.0.CO;2-L Author Information 1 Mesoscopic Physics Laboratory, Department of Physics, Pek...
MOCVD生长InGaAsAl0.2Ga0.8As应变多量子阱 MOCVD Growth of InGaAsAl0.2Ga0.8As Strained Multi-quantum Wells62阅读 文档大小:295.28K 5页 558414上传于2015-04-25 格式:PDF InGaAsGaAs应变量子阱不同结构和生长方式对荧光光谱影响的研究---优秀毕业论文 参考文献 可复制黏贴 热度: 分子束外延生长高应变单量子...
semiconductor quantum wellssilicon/ quantum wellsdielectric propertiesadmittancetemperature dependenceAdmittance measurements were performed on nc-Si/CaF 2 multi quantum wells (MQWs) with 50 periods, over the temperature range 75–320 K. Nominal CaF 2 thickness in each bilayer was in the range of 1.4...
Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phas... Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic ...
A novel type of gas supply system has been developed to grow high quality InGaN/GaN mulitlayers used for fabrication of multi-quantum wells(MQWs) by metal organic chemical vapor deposition(MOCVD).Its major advantage is the effective control of the steady pressure and temperature.Compared with the...