軽量で持ち運びに便利 ヤマハ譜面台MS-260AL折りたたみ式譜面台MS-260AL。パネル締め付け部はギア式角度調節方式。塗膜が厚い紛体塗装でマットな黒色仕上げ。軽量(約730g)タイプ。手持ちと肩掛けが可能なソフトケース付き。【仕様】[本体]色:黒仕上げ:紛体塗装[サイズ/質量]寸法高さ:1,...
PengstateDingstateYongbostateSustateWuchangstateDingstateMuhammadstateAsifstateJournal of SemiconductorsfT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm[J]. 王庆,丁芃,苏永波,丁武昌,Muhammad Asif,唐武,金智.Journal of Semiconductors. 2016(07)...
fT= 260 GHz andfmax= 607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs withGm.max= 1441 mS/mm fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm[J]. 王庆,丁芃,苏永波,丁武昌,Muhammad ... Qing,Wang,Peng,... - ...
fT=260 GHz andfmax = 607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm HEMTGHZ毫秒高电子迁移率晶体管INGAAS栅极纳米INP基The 100-nm T-gate InP-based InAlAs/InGaAs high electron mobility transistors(HEMTs) with the width of 2 × 50 μm and source-drain...
fT=260 GHz andfmax = 607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mmHEMT,GHZ,毫秒,高电子迁移率晶体管,INGAAS,栅极,纳米,INP基王庆,丁芃,苏永波,丁武昌,Muhammad,Asif,唐武,金智VIP半导体学报:英文版