(1)高效率:GaN基LED多量子阱(MQW)结构能够有效地限制电子和空穴的运动范围,提高了载流子的束缚效应,从而提高了激子的发光效率,使得LED器件的发光效率得到提高。 (2)高亮度:由于GaN基LED多量子阱(MQW)结构具有较高的发光效率,因此LED器件在相同功率下能够发出更强的光亮度。 (3)蓝光发光:GaN基LED多量子阱(MQW)...
例如,LED的多量子阱结构(MQW)的生长就不是严格意义上的单晶外延生长,而是类似于多晶质量的薄膜沉积。LED尽管结构多层、精致且复杂,却可在同一个外延反应腔里完成。这不同于晶体硅太阳能电池等光电材料,其不同结构层必须在不同的设备内分步进行生长。这主要是因为MOCVD在设计和技术上的完善与合理,以及加工设备与制...
The invention discloses a multiple quantum well (MQW) structure, a light-emitting diode (LED) comprising the MQW structure and an LED package comprising the LED, wherein the MQW structure is arranged between a first electric-conduction type semiconductor layer and a second electric-conduction type...
量子阱主要是提高符合效率，量子阱越多复合效率也越高，但是也不能无限多，也受限于量子阱与量子阱之间...
1. 搭建器件结构时，是基于examples中的InGaN修改的，材料的电子和空穴的lifetime和Auger，以及band_...
1.一种高亮度GaN基LED的MQW结构生长方法,其特征在于,所述生长方法包括如下步骤: S1.在衬底上依次生长GaN成核层、非掺杂GaN层、高温N型GaN层; S2.在MFC的控制下,在所述高温N型GaN层上变流量生长超晶格多量子阱MQW层,所述超晶格多量子阱MQW层中TMIn源的流量曲线与MQW能级曲线相对应,所述TMIn源的流量曲线呈...
Wang, LaiHao, Zhi-BiaoLuo, YiChinese Physics LettersWang L, Wang J X, Hao Z B, et al. Efficiency droop effect mechanism in an InGaN/GaN blue MQW LED. Chin Phys Lett, 28: 118105Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED[J] . Wang Jia-Xing,Wang Lai,Hao Zhi-...
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The failure rate of the MQW LED is lower than 20 Fit, which is much lower than the bulk GaAs LED. The characteristics of the degraded LEDs with the respective structures were different. Dark areas, such as dark line defects, or dark spot defects were observed in the emitting areas of ...
摘要 利用LPMOCVD系统生长了InGaN/GaNMQW紫光LED外延片,双晶X射线衍射测试获得了2级卫星峰,室温光致发光谱的峰值波长为399.5nm,FWHM为15.5nm,波长均匀性良好.制成的LED管芯,正向电流20mA时,工作电压... 关键词InGaN / 量子阱 / 紫光LED / MOCVD 收藏 文库来...