^Logan,Galpin,Mott insulator and the doping-induced Mott transition within DMFT:exact results for the one-band Hubbard model,J.Phys.:Condens.Matter 28,025601(2015) 发布于 2024-05-23 20:54・IP 属地甘肃 内容所属专栏 我的凝聚态物理课程 这是最近几年讲授《凝聚态物理导论》课程的讲义 订阅专栏 ...
The paramagnetic phase of the one-band Hubbard model is studied at\nzero-temperature, within the framework of dynamical mean-field theory, and for\ngeneral particle-hole asymmetry where a doping-induced Mott transition occurs.\nOur primary focus is the Mott insulator (MI) phase, and our main ...
Suppression of Mott-Hubbard states and metal-insulator transitions in the two-band Hubbard model I investigate band and Mott insulating states in a two-band Hubbard model, with the aim of understanding the differences,between the idealized one-orbital ... JP Hague - 《Journal of Physics Condensed...
The Mott metal–insulator transition in the multi-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The critical interaction Uc is obtained analytically. For the symmetric case and for orbital degeneracy M we find Uc=(4M+2)L2 where L2 is ...
We study the metal-insulator transition and magnetic ordering in the Hubbard model using the particle-hole mapping. This representation facilitates the exact solution of the half-filled band in the limit of high spin. We find that the two-dimensional Hubbard model has a charge-excitation gap at...
The Properties of the Mott insulator to superfluid phase transition are obtained through the fermionic approximation in the Jaynes-Cummings-Hubbard model on linear, square, SC, FCC, and BCC Bravais lattices. For varying excitation number and atom-cavity frequency detuning. We find that the Mott ...
The electronic properties of paramagnetic V_2O_3 are investigated by the ab-initio computational scheme LDA+DMFT(QMC). This approach merges the local density approximation (LDA) with dynamical mean-field theory (DMFT) and uses numerically exact quantum M
(for a cartoon depiction, see Fig.1, right inset), at a well-defined temperature scale,TM, much belowEatomic, signaling the sudden appearance of mobile charge carriers. This behavior has been studied in detail in the one-band Hubbard model32. Here we propose that also for multi-orbital ...
in the low-energy physics and weaken the holon-doublon binding gap. Keywords: Hubbard model, Mott insulator, holon-doublon binding, pseudogap iv 目录 目目目 录录录 摘要· ··· i Abstract ··· iii 目录· ···
For the Hubbard model with multiple orbitals at the magnetic ions, the orbital necessarily becomes an active degree of freedom in addition to the spin once the system is in the Mott insulating phase with localized electrons on the lattice sites7. In this case, more structures are involved in ...