Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 2.1 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 - - V Zero Gate Voltage Drain Cur...
All Ratings: T C = 25°C unless otherwise speci fi ed. Symbol V DSS I D I DM V GS V GSM P D T J ,T STG T L I AR E AR E AS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1Gate-Source Voltage Continuous Gate-Source ...
We've always had a single style of schematic symbol for MOSFETs within CircuitLab schematics, but we now have several options available. These three styles are "CMOS" (the original style), "ENH" for Enhancement-mode MOSFETs, and "ENH_BD" which adds a body diode to the symbol....
Symbol Typical Maximum Unit t ≤ 10 s 20 25 a Junction-to-Ambient Thermal Resistance RθJA Steady State 48 60 °C/W Junction-to-Case Thermal Resistance Steady State RθJC 2.8 3.5 Note: 2 2 a The value of RθJA is measured with the device mounted on 1-inch (6.45cm ) with 2oz.(...
The MOSFET model has behaves as though it doesn't have a body diode - in effect allowing the MOSFET to block current in both directions between Source and Drain. All real MOSFETs have a parasitic diode and can only block current in one direction (not both). ...
18A E AR Repetitive Avalanche Energy 15mJ dv/dt Peak Diode Recovery dv/dt 8.1V/ns T J Operating Junction and -55 to +175T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)A...
Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5 0.85 1.2 V VGS=2.5V, ID=2.5A - 37 59 mΩ Drain-Source On-State Resistance RDS(ON) VGS=4....
A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 70 V V = 0V, I = 10µA DSS GS D Zero Gate Voltage Drain Current @ TC = +25°C 1.0 IDSS µA VDS = 60V, VGS = 0V @ TC = +125°C ...
Figure 1 MMIX1T132N50P3 Device Symbol The current mirror is created as a part of the major MOSFET structure with common drain (D) and gate (G) terminals and separated source terminals (S and CS). To minimize errors related to the voltage drop on bounding wires from the source current of...
1 Jun ,2019 - Rev.1.2 WCR250N65 series o Electronics Characteristics (T =25 C, unless otherwise noted) A Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV V = 0 V, I = 250uA ,T =25°C 650 V DSS GS D J Zero Gate Voltage ...