Infineon Package name Simulation Model VDSmax RDS (on)@10V max RDS (on)@4.5V max QGtyp @10V QGtyp @4.5V VGS(th)min - max VGS(th) ID@25°C max Special Features Technology Qualification Operating Temperature min - max Budgetary Price €/1k ...
Infineon Package name Filter Simulation Model Filter VDS max Filter RDS (on) @10V max Filter RDS (on) @4.5V max Filter IPD020N03LF2Snew active and preferred Buy Online DPAK (TO-252) PG-TO252-3 - 30 V 2.05 mΩ 2.7 mΩ IPD047N03LF2Snew active and preferred Buy Online DPAK (...
• Line Drivers • Motor and Solenoid Drive Package Types SOT-23 MCP1401 MCP1402 GND 1 5 OUT OUT VDD 2 IN 3 4 GND GND 2007-2014 Microchip Technology Inc. D MCP1401/02 Functional Block Diagram VDD Inverting 850 µA 300 mV Output Non-inverting Input Effective 4.7V MCP1401 ...
This is one of the types of MOSFETs and is a kind of transistor. Part Number: HY4008 Function: 80V, 200A, N-Channel Enhancement Mode MOSFET (Transistor) Package: TO-247, TO-3P Type Manufacturer: Xi’an Hooyi Semiconductor Technology Image Description An N-channel MOSFET (Metal Oxide Semic...
Quick reference to ourdocumentation types. Public (4) 4 documents Sort byRelevanceNewest/DateFrom A-ZFrom Z-A Data Sheet Dual N-channel dual gate MOSFET PDFRev 2.0Sep 7, 2011321.0 KBBF1206FEnglish Package Information plastic, surface-mounted package; 6 terminals; 1 mm pitch; 1.6 mm x 1.2 ...
Step 3.Enter the required basic information from the datasheet, such as the part number, package, and maximum ratings. Step 4.Enter the information for the Electrical Characteristics of the transistor. Below is a screenshot of the datasheet, with the required parameters highlighted in red. ...
Quick reference to our documentation types. Public (4) Filter by Document Types Data Sheet Package Information Packing Information Supporting Information 4 documents Sort by Data Sheet N-channel dual-gate MOS-FETs PDFRev 2.1Dec 30, 2010430.0 KBBF1212_R_WREnglish Package Information pl...
be used as a temperature-sensitive electrical parameter. Indeed, dID/dtcan be easily measured by the induced voltage across the parasitic inductance between the Kelvin and the power emitter terminal of a power module [28]. For a discrete SiC MOSFET with TO-247 package, the Kelvin connection ...
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I was wondering in general what types of semiconductors are used in most solid state RF power amplifiers like the ones at cell base stations and elsewhere...