Find out more about our N Channel Power MOSFET Portfolio – Robust Design for High-Performance Industrial and Automotive Applications
由于两者电参数定义相同,所以本文仅就Planar 功率VDMOSFET管进行讨论(以下简称DMOS)。 大部分的DMOS管都是N沟道型的,图2给出了N沟道DMOS的剖面图。 图2、N型Planar DMOS剖面图 当在栅极有驱动电压时,沟道(channel)发生反型,在漏端电压的偏置下,电流从漏极通过沟道流向源极,DMOS管导通。当栅极无驱动电压时,DM...
An N-channel MOSFET uses electrons to create a current channel. This allows electrons to move quickly and easily through the current when the MOSFET is activated and switched on. Because of the specific characteristics of N-channel MOSFETs, the mobility of the carriers is approximately two to th...
STE40NC60 N-CHANNEL 600V - 0.098Ω - 40A ISOTOP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STE40NC60 600V < 0.13Ω 40 A n TYPICAL RDS(on) = 0.098 Ω n EXTREMELY HIGH dv/dt CAPABILITY n 100% AVALANCHE TESTED n NEW HIGH VOLTAGE BENCHMARK n GATE CHARGE MINIMIZED ...
FET型 MOSFET N-Channel, Metal Oxide 功率- 最大 150W 漏极至源极电压(Vdss) 900V 输入电容(Ciss ) @ VDS 1600pF @ 25V 闸电荷(Qg ) @ VGS 120nC @ 10V 封装/外壳 TO-247-3 RoHS指令 Lead free / RoHS Compliant 类别 Power MOSFET 配置 Single 外形尺寸 15.87 x 5.31 x 20.7mm 身高 20.7mm...
STE53NC50 N-CHANNEL 500V - 0.070Ω - 53A ISOTOP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STE53NC50 500V < 0.08Ω 53 A n TYPICAL RDS(on) = 0.07 Ω n EXTREMELY HIGH dv/dt CAPABILITY n 100% AVALANCHE TESTED n NEW HIGH VOLTAGE BENCHMARK n GATE CHARGE MINIMIZED DESCRIPTION...
N-Channel 2.5-V (G-S) MOSFET Si2302ADS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.060 at VGS = 4.5 V 0.115 at VGS = 2.5 V ID (A) 2.4 2.0 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Compliant to RoHS Directive ...
MOSFET – N-Channel, UniFETt, FRFET) 200 V, 18 A, 140 mW FDPF18N20FT, FDP18N20F Description UniFET MOSFET is onsemi's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching ...
MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 47 A, 12.8 mW FDMC86183 General Description This N−Channel MV MOSFET is produced using onsemi's advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance ...
N-Channel 2.5-V (G-S) MOSFET Si5404DC Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 0.030 @ VGS = 4.5 V 0.045 @ VGS = 2.5 V 1206-8 ChipFETr 1 D D D D D DG S Bottom View Ordering Information: Si5404DC-T1 ID (A) 7.2 5.9 D Marking Code AB XX Lot Traceability...