Trench-gated MOSFETs are a class of MOSFETs in which the gate is positioned in a trench that is formed at the surface and extends into the silicon. The gate is formed in lattice-like geometric pattern which defines individual cells of the MOSFET, the pattern normally taking the form of clos...
and a gate over the gate dielectric layer, wherein the drain region, the layer of second conductivity type and the deeper dopant region of the conformal well together form a diode, the diode being structured to experience avalanche breakdown so as to lower the source-drain breakdown voltage of...
Independent control over each MOSFET allows each driver to be driven with an independent PWM signal for full sinusoidal excitation. All logic inputs have standard CMOS threshold levels and can be programmed to be compatible with 3.3 or 5 V logic outputs. The gate drive control logic inputs are...
When a high conversion ratio is required at a low output voltage, a center-tapped rectifier is typically used because it reduces MOSFET losses compared to a full-bridge rectifier. To provide evidence for the proposed approa...
Variable Speed Drive and Variable Frequency Drive: Variable and adjustable frequency drives from Calnetix take full advantage of the latest advances in permanent magnet motor drives and generators. By developing, integrating or manufacturing the power el
and filling the etched region with an electrically conductive material (e.g. doped polysilicon) to form a gate electrode. For a given BV requirement this generally results in (i) a reduction of Rsp through a reduction of the source-drain pitch, (ii) a reduction of Rsp and an improvement ...