1.Diodecontinuous forward current:体二极管连续正向电流 这个参数表示体二极管在连续导通时能够承受的最大电流。这个值表示MOSFET在热平衡状态下能长期承受的电流,规格书中的这个参数是厂家在特定条件下测出来的电流值,所以仅供参考,实际我们需要结合我们PCBA的散热设计来计算实际能流过的电流,在此不展开说明,后续单独开...
V SD Diode forward voltage drop.二极管源漏电压该参数如果过大，在桥式或LLC 系统中会导致系统损耗过大，温升过高。T rr Reverse recovery time 反向恢复时间该参数如果过大，在桥式或LLC 系统中会导致系统损耗过大，温升过高。同时也加重了电路直通的风险。Q rr Reverse recovery Charge 反向恢复充电电量 该参数...
Source drain diode Symbol Parameter Test conditions ISD ISDM (1) VSD (2) trr Qrr IRRM Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 16A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15A, di/dt = 100A/µs, VDD =...
1NCE65T900D ，NCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent R DS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC ...
(Note 3) VSD VGS=0V,IS=10A - 1.2 V Diode Forward Current (Note 2) IS - - 60 A Reverse Recovery Time trr - 25 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 20A di/dt = 100A/μs(Note3) - 24 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (...
If you set the Reverse recovery loss model parameter to Tabulated loss, the value of the Reverse recovery loss table, Erec(Tj, If) parameter specifies the dissipated energy as a function of the junction temperature and the forward current just before the switching event. The off-state voltage ...
• Lower Gate Charge, Qg • TO-247 or Surface Mount D 3PAK Package •Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switch-ing losses are addressed with Power MOS 7® by signi fi cantly ...
Diode forwardvoltageVSD1.3VIS=80 A, VGS=0V Reverse recoverytimetrr180ns IS=30A, di/dt=100A/μs Reverse recoverychargeQrr1.5uC Peak reverse recoverycurrentIrrm15.2A Note Calculated continuous current based on maximum allowable ...
PWMMOSParameterOutputvoltage:VoOutputcurrent:IoDutycycle:DGateThresholdVoltage:VTHPRIMOSRMScurrentForwardTransconductanceTotalGateCharg:QGGate-SourceCharg:QGSGate-DrainCharg:QGDReverseRecoveryCharge:QrrInputCapacitanc:CISS(typ)OutputCapacitance:COSS(typ)ReverseTransferCapacitance:CrssTurnonresistance:RDS(ON)Gate...
TYP. 600 - - 0.66 2.0 - -- -- -- -- - 0.310 - 3.7 - 1078 - 57 -4 - 35 - 145 - 31 -7 - 13 - 16 - 21 - 39 - 21 0.2 0.7 -- -- Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current VSD trr Qrr IRRM TJ = 25 °C, IS = 5.5 ...