[2] Ogasawara S, Akagi H. Modeling and damping of high-frequency leakage currents in PWM inverter-fed AC motor drive systems[J]. IEEE Transactions on Industry Applications, 1996, 32(5): 1105-1114. [3] Skibinski G L, Kerkman R J, Schlegel D. EMI emissions of modern PWM AC drives[J]...
AbstractWith the increase of the switching frequency of SiC MOSFETs, the crosstalk of inverter bridge arm becomes more and more serious, and it is easy to cause the bridge arm through short circuit, which limits the further increase of the switching frequency of SiC MOSFETs. In this paper, a...
This reference design provides specification, block diagram and PCB layout data of 300W isolated DC-DC converter which is small size and suitable for consumer applications. 詳細資料 Single Phase PFC Power Supply Basic Simulation Circuit This reference design provides OrCAD®based simulation circuit, si...
Switching power supply, ballasts, high-frequency induction heating, and high-frequency inverter welding are all examples of where they're used. In the realm of high-frequency power supply, such as computer and communication power supply, it is becoming increasingly popular. Types and structures of...
The metal oxide n* Source n* Drain tox semiconductor field effect transistor (MOSFET) is based p-Substrate on the original field-effect transistor introduced in the Channel l 70s. Figure 1 shows the device schematic, transfer characteristics and device (a) symbol for a MOSFET. The invention ...
SGP04N60 SGD04N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - hig...
ID LCD Panel Power 500V 0.18 25A SMPS Power DC-AC InverterFSW25N50 RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability ImprovedGDSOrdering InformationPART NU 0.137. Size:1923K blue-rocket-elect brcs5n50yu.pdf BRCS5N50YU Rev.A Aug....
Fig.8 Equivalent circuit diagram of the improved SiC MOSFET model 4.2 静态特性仿真与实验验证 首先,利用PSpice的DC分析得到改进模型与传统模型在不同栅极电压下的静态特性。图9所示为CREE 1 200V/325A SiC MOSFET模块(CAS325M12HM2),将仿真得到的静态特性与模块数据手册中的静态特性曲线进行了对比。SiC MOSFET静...
对SiC MOSFET进行短路保护(Short Circuit Protection, SCP),能够有效防止其过电流损坏[12]。主要方法有源极串电阻法[13]、杂散电感检测法[14]、门极电荷检测法[15]、退饱和法(又称DESAT法)[16]及印制电路板(Printed circuit boards, PCB)罗氏线圈法[17]等。目前最有效且应用最为广泛的短路保护方法为DESAT法与...
Local NPN Self-Biasing Turn-Off Circuit The inverter draws current from the driver during the on time of the MOSFET, lowering the efficiency of the circuit. Furthermore, QINV saturates during the on-time, which can prolong turn-off delay in the gate drive. 20 Fundamentals of MOSFET and ...