Here, we investigate the CVD growth of MoS 2 single crystals on sapphire substrates by using thermally evaporated molybdenum trioxide (MoO 3 ) thin films as molybdenum (Mo) source instead of conventionally used MoO 3 powder for co-evaporation synthesis. The MoO 3 thin film source provides ...
英文名称:monolayer continuous film of MoS2 on sapphire substrate 性质 形态:薄膜 参数 MoS2薄膜尺寸:8 mm*8 mm 厚度:0.6~0.8 nm 基底:蓝宝石 应用 西安齐岳生物*推出CVD法制备的单层二硫化钼连续薄膜,相比较锂插层制备的单层二硫化钼,该产品具有缺陷少,层数可控,* 的光学性质,是研究层数和荧光效应...
参考文献 Li, T., Guo, W., Ma, L. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. (2021). DOI:10.1038/s41565-021-00963-8 https://doi.org/10.1038/s41565-021-00963-8 学研汇是国内领先的科研服务创新平台,专注于科学仪器...
近日,来自南京大学、东南大学、南京邮电大学和西北工业大学的研究人员联合在国际著名期刊Nature上以Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire为题发表重要进展文章,报道了双层二硫化钼MoS2在蓝宝石c面上均匀成核(>99%)的实验方法。文章设计了蓝宝石c面上的原子平台高度,以实现边缘形核机...
文献链接:Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire.Natrue Nanotechnology,2021, DOI: 10.1038/s41565-021-00963-8. 本文由CQR编译。 欢迎大家到材料人宣传科技成果并对文献进行深入解读,投稿邮箱:tougao@cailiaoren.com. ...
进一步还实现了在C/A蓝宝石上生长单晶MoSe2。本文开发的方法提供了一种通用且可扩展的途径来生产面向未来电子产品的晶圆级TMDC单晶。文章以“Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire”为题发表在顶级期刊Nature Nanotechnology上。
Inset: photograph of pristine as-grown wafer-scale MoS2 on sapphire substrate Full size image The control sample is a commercial Pt foil, which exhibits a nearly zero overpotential. From these data shown in Fig. 4b, we can clearly see that samples with either more domain boundaries or more ...
laser depositionMolybdenum disulfide (MoS2) films were deposited on sapphire (0001), Si (001) and graphene on Cu by laser physical vapor deposition at 600°C for different time periods to achieve control of...doi:10.1007/s11664-016-5060-xJagannadham, K....
Madan, H. et al. 26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-sapphire (VOS) wafer. In2015 IEEE International Electron Devices Meeting (IEDM)9.3.1–9.3.4 (IEEE, Washington, DC, 2015). El-Hinnawy, N. et al. Low-loss latching microwave switch using thermally pulsed...
Inset: photograph of pristine as-grown wafer-scale MoS2 on sapphire substrate Full size image The control sample is a commercial Pt foil, which exhibits a nearly zero overpotential. From these data shown in Fig. 4b, we can clearly see that samples with either more domain boundaries or more ...