These types of anomalies, which can severely affect the properties of these materials can be detected through low-frequency Raman imaging. Our findings provide useful insights for understanding various structure-dependent properties of 2D materials that could be of great importance for the development ...
Low-frequency noise (LFN) analysis was carried out for studying the performance of MoS2 FETs. FETs made of bilayer MoS2 present a longer trap decay time. Further analysis shows that the LFN subjects not only to the physical properties of the channels but also the behavior of contacts in MoS2...
Temperature dependent Raman spectroscopy of shear and layer breathing modes in bilayer MoS2 We report low-frequency Raman scattering results of bilayer (2L) MoS2 structures with 3R and 2H stacking orders. The stacking orders were identified by Ram... MRH Kim - 《Current Applied Physics the Offici...
We have investigated the interlayer shear and breathing phonon modes in MoS$_{2}$ with pure 3R and 2H stacking order by using polarization-dependent ultralow-frequency Raman spectroscopy. We observe up to three shear branches and four breathing branches in MoS$_{2}$ with thickness from 2 to...
MoS2-based FET biosensors can better control static electricity and reduce low-frequency flicker noise due to interface traps and low surface roughness in its pristine surfaces. PSA is a biomarker for diagnosing prostate cancer, the second most common cancer among men worldwide [1]. The survival ...
Intense Raman peaks caused by the TO and LO modes appear at wavenumbers of approximately 770–800 and 960–970 cm−1, respectively [44], as demonstrated in Fig. 2(c). In the low-frequency region below 280 cm−1, Raman peaks at 146, 150, 236 and 241 cm−1 attributed to the ...
where C1 is a proportionality constant, h represents Planck's constant, v is the photon frequency, and n is an exponent that depends on the type of electronic transition in the material. For direct allowed transitions, which are commonly observed in semiconductors, the exponent n equals 0.5. ...
The storage modulus and loss modulus were measured using a dynamic thermomechanical analyzer (DMAQ800, TAInstrumentsCorp., USA) with three point bending test method under the tension mode with a frequency of 10 Hz, and the strain amplitude ranging from 0 °C to 80 °C was 20 μ...
The device exhibits a good performance with a high current on/off ratio of 4 × 103, a small subthreshold swing of 0.27 V/dec, and a low operation voltage of ∼1.5 V, respectively. Furthermore, an ion-contributed quasi-EDL model can be further confirmed by the frequency-...
Raman spectra with the resolution of 0.7 cm−1 were obtained after all the processes introduced in the Synthesis section. On that occasion, the as-synthesized the surface of tMheosSe2 nanosheets were aggregate forming small black solid blocks. Laser was focused on blocks. Three different ...