These types of anomalies, which can severely affect the properties of these materials can be detected through low-frequency Raman imaging. Our findings provide useful insights for understanding various structure-dependent properties of 2D materials that could be of great importance for the development ...
We have investigated the interlayer shear and breathing phonon modes in MoS$_{2}$ with pure 3R and 2H stacking order by using polarization-dependent ultralow-frequency Raman spectroscopy. We observe up to three shear branches and four breathing branches in MoS$_{2}$ with thickness from 2 to...
In this paper, inch sized few⁃layer MoS2 thin films were prepared successfully and controllably on glass substrate through room⁃temperature radio frequency ( RF) magnetron sputtering deposition combined with sulfuration annealing at low temperature. The results of atomic force microscopy ( AFM) ,...
Observation of Strong Interlayer Couplings in WS 2 /MoS 2 Heterostructures via Low-Frequency Raman Spectroscopy In contrast, LF modes are not observed in the MoS2 and WS2 monolayers. These results indicate that our directly grown 2D bilayered TMDCs with a ... KH Shin,MK Seo,S Pak,... - ...
Intense Raman peaks caused by the TO and LO modes appear at wavenumbers of approximately 770–800 and 960–970 cm−1, respectively [44], as demonstrated in Fig. 2(c). In the low-frequency region below 280 cm−1, Raman peaks at 146, 150, 236 and 241 cm−1 attributed to the ...
For instance, in graphene, it has been found that the low-frequency phonons can have very large mean-free path in graphene27,28. The combination of the NEGF and the ab initio cal- culation can provide us an accurate upper limit for the thermal conductivity29. Please see the section Method...
By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) v... 展开 关键词: first-principles calculations photoluminescence ultralow-frequency Raman ...
A low-temperature multi-frequency electron spin resonance (ESR) study has been carried out on 1, 3.5, and 6 layer thick MoS2 films, grown by metal organic vapor deposition (MOCVD) and subsequently transferred on SiO2/Si. This reveals the... B Schoenaers,A Leonhardt,AN Mehta,... - 《Ecs...
The storage modulus and loss modulus were measured using a dynamic thermomechanical analyzer (DMAQ800, TAInstrumentsCorp., USA) with three point bending test method under the tension mode with a frequency of 10 Hz, and the strain amplitude ranging from 0 °C to 80 °C was 20 μ...
To further confirm the good interfacial coupling of our samples, we performed the Raman spectra in the ultralow-frequency region, which provides a fingerprint for benchmarking the quality of interfacial coupling15,44. The shear (S) and layer-breathing (LB) modes of twisted bilayer MoS2homostructu...