This paper discusses the high-frequency equilibrium-state capacitance-voltage ( C - V ) characteristics of a buried-channel MOS capacitor, that is, a MOS capacitor with a thin p -type layer at the surface of an n -type Si substrate. For this device, changing the gate voltage in the ...
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Vcanusedinsmallerdimensiondevices.ThiscanenablethehighfrequencyC Vmeathodtouseinmorewidely. Keywords:MOScapacitor;thedensityofcharge;interfacestate;highfreqencyC VEEACC:2560R 0引言 MOS电容是MOSFET的核心部分,MOS结构电容由于其结构简单并且和CMOS工艺
H. Saghrouni, A. Cherif, and L. Beji, Electrical and dielectric properties of a Dy2O3MOS capacitor.J. Electron. Mater.51, 1250 (2022). ArticleCASGoogle Scholar A. Tataroglu, S. Altındal, S. Karadeniz, and N. Tugluoglu, Au/SnO2/n-Si (MOS) structures response to radiation and ...
A MOS capacitor (MOSCAP) contains three main parts: A semiconductor body or substrate An insulator film A metal electrode (or gate) There are two main types of MOSCAPs: surface channel and buried channel designs. The design used depends on the application. ...
Using high-frequency capacitance-voltage ( C- V) measurements on the ultra-thin MOS capacitor structure, the bandgap narrowing versus dopant density in the space-charge region was determined by fitting the measured capacitance minimum, C min, with our theoretical calculations using a modified C- V...
MOS(MIS) TYPE CAPACITOR 专利名称：MOS(MIS) TYPE CAPACITOR 发明人：ENDO KOICHI 申请号：JP15936490 申请日：19900618 公开号：JPH0449651A 公开日：19920219 专利内容由知识产权出版社提供 摘要：PURPOSE:To improve high frequency properties and the breakdown strength against reverse bias surge by supplying ...
An Al/SiO2/p-Si (MOS) capacitor with a thick (826 Å) interfacial oxide layer (SiO2) which is formed by using the thermal oxidation method is fabricated to investigate both frequency and applied bias voltage dependences of real and imaginary parts of dielectric constant (ε' and ε'') an...
High−Side Driver The high−side driver (GH) is designed to drive a floating N−channel MOSFET. The bias voltage for the high−side driver is developed by a bootstrap supply circuit consisting of the internal Schottky diode and external bootstrap capacitor (CBOOT). During startup, VS...
High−Side Driver The high−side driver (GH) is designed to drive a floating N−channel MOSFET. The bias voltage for the high−side driver is developed by a bootstrap supply circuit consisting of the internal Schottky diode and external bootstrap capacitor (CBOOT). During startup, VS...