M. Anantram, M. Lundstrom, and D. Nikonov, "Modeling of Nanoscale Devices," Proc. IEEE, vol. 96, no. 9, pp. 1511-1550, 2008.M. Anantram, M. Lundstrom, and D. Nikonov. Modeling of nanoscale devices. Proc. of the IEEE, 96(9):1511-1550, 2008....
nanoscaleMOSFETsurface potentialcompact modelingtwo-dimensionalself-consistentIn this paper, a closed-form analytical model for bulk MOS devices is presented, which calculates the device current from a 2D analytical solution of Poisson's equation with self-consistently taking into account the inversion ...
Loong Peng MT, Ismail R., Modeling of nanoscale MOSFET performance in the velocity saturation region, ELEKTRIKA Journal of Electrical Engineering, 9, 37-41, 2007M.L.P. Tan, R. Ismail, Modeling of nanoscale MOSFET performance in the velocity saturation region, Jurnal Elektrika 9 (1) (2007) ...
of devices; MOSFET scaling; MOSFETs; Nano-devices; Nanoscale semiconductor devices; Neumann equation; New devices; Non-equilibrium Green's function formalism; Physical effects; Post-CMOS; Quantum mechanical; Quantum mechanical effects; Quantum transport; Quantum-mechanical modeling; Small devices; Sub-...
Bromley, S. T., & Flikkema, E. (2005). Columnar-to-disk structural transition in nanoscale (SiO2)N Clusters.Physical Review Letters, 95, 185505. ArticleCASGoogle Scholar Bruno, M., Palummo, M., Ossicini, S., & del Sole, E. (2007). First-principles optical properties of silicon and...
Analytical Parametric Modeling of Nanoscale Surrounding Gate MOSFET Based on the Poisson's Equation In this paper lightly doped surrounding gate (SGT) MOSFET, which is based on the exact solution of the Poisson's equation, and the current continuity equat... PK Singh,S Sharma - 《Journal of ...
We review recent results on the modeling of nanoscale nMOSFETs with III-V compounds channel material. The focus will be on semi-classical transport modeling in short channel devices; we will show that back-scattering in the channel still influences the device performance, and thus affects the cho...
The charging dynamics of the nanoporous electrodes can be explained by the diffusion model, which is rooted in mean-field theory11,31. To compare macroscale experiments and nanoscale modeling, we derive the dimensionless form of the diffusion model for the charging and discharging process of the nan...
Transport modeling for nanoscale semiconductor devices Due to extreme miniaturization of device dimensions the well established TCAD tools are pushed to the limits of their applicability. Since conventional MOS... M Pourfath,V Sverdlov,S Selberherr - International Conference on Solid-state & Integrated...
The goal of this dissertation is to develop accurate and efficient compact models for emerging nanoscale CMOS devices through a sound understanding of the underlying physics.;New MOSFET architectures - Multi-Gate FETs (MG-FETs) which employ the use of multiple gate electrodes to thwart the ...