240Kb/2Pisc Silicon NPN Power Transistor More results 类似说明 - MJL21194 制造商部件名数据表功能描述 ON SemiconductorMJL21193 152Kb/6P16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS January, 2007 ??Rev. 5 Motorola, IncMJ21193 ...
Transistor Polarity NPN Collector Base Voltage VCBO 400 V Collector Emitter Voltage VCEO Max 250 V Emitter Base Voltage VEBO 5 V Collector Emitter Saturation Voltage 1.4 V Maximum DC Collector Current 16 A Gain Bandwidth Product fT 4 MHz
制造商ISC [Inchange Semiconductor Company Limited] 网页http://www.iscsemi.cn 标志 功能描述iscSiliconNPNPowerTransistor 类似零件编号 - MJL21194G 制造商部件名数据表功能描述 ON SemiconductorMJL21194G 152Kb/6P16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS ...
制造商ISC [Inchange Semiconductor Company Limited] 网页http://www.iscsemi.cn 标志 功能描述iscSiliconNPNPowerTransistor 类似零件编号 - MJL21194G 制造商部件名数据表功能描述 ON SemiconductorMJL21194G 152Kb/6P16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS ...
1 Publication Order Number:MJL21193/D MJL21193 (PNP),MJL21194 (NPN)Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output,disk head positioners and linear applications.Features •Total Harmonic Distortion ...
tion; i.e., the transistor must not be subjected to greater dis- sipation than the curves indicate. 1.0 The data of Figure 13 is based on T = 150°C; T is vari- J(pk) C able depending on conditions. At high case temperatures, thermal limitations will reduce the power th...
库存编号:7743571onsemiTransistor NPN 250V 16A 200W TO3BPL, EA28 1起订1+ 7+ 13+ ￥68.85 ￥66.81 ￥64.82 1-3周购买 MJL21194G产品技术参数 安装类型通孔 长度20.3mm 尺寸20.3 x 5.3 x 29mm 封装类型TO-3BPL 高度29mm 晶体管类型NPN 晶体管配置单 ...
MJL21194类似电子元器件: MJL21193 Silicon power transistor MJL21194 Silicon power transistor 品牌:Motorola 封装形式 : TO-220 引脚数量 : 3 温度范围 : 最小 -65 °C | 最大 150 °C 文件大小 : 174 KB 功能应用 : Silicon power transistor ...
MJL21193G;MJL21194G;MJL21194;MJL21193;中文规格书,Datasheet资料
Transistor 类型 NPN Current - Collector (Ic) (最大) 16A 电压- 集射极击穿 (最大) 250V Vce Saturation (最大) @ Ib, Ic 4V @ 3.2A, 16A Current - Collector Cutoff (最大) 100µA DC Current 增益 (hFE) (Min) @ Ic, Vce 25 @ 8A, 5V 最大功率 200W 频率- Transition 4MHz 工作温度...