金属-绝缘体-金属(MIM)电容器是由两层金属膜形成的平行板电容器。在电容器顶部金属(Capacitor top metal)-CTM和电容器底部金属(Capacitor bottom metal)-CBM层之间有一层薄的绝缘电介质层。这些MIM层由Al、AlCu合金、TiN、Ti、TaN和Ta制成。而介电层由氮化硅或氧化硅制成。 2.为什么需要加MIM CAP? 几何缩放...
The present invention is a metal having upper and lower plates separated by an insulating layer - insulator - features a method of forming a metal capacitor, one of the upper and lower plates is the other of the upper and lower plates are and a shape with at least one protrusion extending...
1)MIM capacitorMIM电容 1.Various GaAs MMIC (monolithic microwave integrated circuit) passive components,including rectangle spiral inductors,MIM capacitors,and film resistors,are fabricated,and their equivalent circuit models are established.制作了不同结构参数的GaAsMMIC无源元件,包括矩形螺旋电感、MIM电容和薄...
MIM电容(Metal-Insulator-Metal capacitor)是一种典型的电容器结构,由两层金属电极之间的绝缘层组成。MIM电容的电容值可以根据以下公式计算: C = (εr * ε0 * A) / d 其中, C是电容值(单位:法拉); εr是绝缘层的相对介电常数; ε0是真空中的介电常数(约为8.854 × 10^-12 F/m); A是金属电极间...
The structure of the MIM capacitor is as follows. The dielectric layer between CTM and Mt-1 is relatively thin, and the formed capacitor has a higher density. MIM capacitors mainly use different layers of metals and the dielectric between them to form capacitors. MIM capacitor is shown be...
2.通常,mim电容器具有夹层结构,并且可以被描述为平行板电容器。电容器顶部金属(capacitor top metal,ctm)通过薄绝缘电介质层与电容器底部金属(capacitor bottom metal,cbm)分离。 3.金属-绝缘体-金属(mim)电容器可以用于互补金属-氧化物-半导体(metal – ...
15. An MIM capacitor, comprising: a dielectric layer disposed over a substrate containing a conductive layer, wherein the dielectric layer includes a groove to expose the conductive layer in the substrate; a first metal layer disposed on a bottom surface and a bottom portion of a sidewall surfa...
MIM capacitor 专利名称：MIM capacitor 发明人：吉富 崇,猪原 正弘,君島 秀樹,大_也,蓮見 良治,山口 崇 申请号：JP2000368693 申请日：20001204 公开号：JP3967544B2 公开日：20070829 专利内容由知识产权出版社提供 摘要：Array 申请人：株式会社東芝 地址：東京都港区芝浦一丁目１番１号 国籍：JP 代理人...
A metal-insulator-metal (MIM) capacitor and a process of forming the same are disclosed. The process includes steps of: forming a lower electrode that provides a lower layer and an
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer ...