9 x 13 mm in size, with up to 1 TB in capacity using Micron’s 232-layer 3D NAND technology. It delivers twice the performance of UFS 3.1 specification devices, pumping out up to 4,300 MBps sequential reads and 4,000 MBps sequential writes. ...
Speaking of economics, Intel and Micron are already producing the early generation of the new technology at the IMFT Lehi, Utah fab. However, they mentioned that both companies will also produce the memory separately, meaning they both have rights to the technology outside of the IMFT collaborati...