3D 封装技术的高速发展主要依赖于三个重要的技术突破(如图 1):微凸点(Microbump Bonding)互连技术、晶圆减薄(Wafer Thinning)技术、硅通孔(Through Silicon Vias, TSV)技术。 与引线键合(Wire Bonding)技术相比,面分布凸点阵列的应用大幅提高了封装结构中的空间利用率,打破了焊盘只能布置在芯片四周的限制,I/O 端子...
Potential for damage initiation in the TSV/micro-bump is examined by the measure of plastic strain accumulation. The existence of an underfill layer around the TSV/micro-bump enhances the overall resistance to shear deformation, although with a higher buildup of local stresses. The TSV and ...
此外,TSV、微凸块(microbump)及其他锡焊凸块(solder bump)也会在周遭产生永久应力。新思科技的Sentaurus Intercon…www.elecfans.com|基于16个网页 2. 微焊点 该公司采用TSV、再布线层以及微焊点(Microbump)等要素技术,制作了三维积层有半导体芯片和300mm晶圆的模块,并评 …china.nikkeibp.com.cn|基于8个网页...
The package structure was integrated with TSV technology on both sides, with vertical stacking of the top and bottom of the chip. Figure 1 shows the physical diagram of the micro-assembly. Figure 1. DDR3 micro-assembly physical diagram: (a) top component; (b) bottom component. The two ...
Cu TSV combination with Cu/Sn micro-joint to form vertical interconnection is a good alternative for 3D integration. The insertion loss of two chip stack was evaluated by simulation to realize the signal transmission effects in high speed digital signaling via TSV and micro-joint interconnect. To...
A fabrication method of the ultra-thin chip with through silicon via(TSV) for the 3D packaging was presented.The method was realized with fabricating the t... J Yuan,L Zhichengb,X Wang,... 被引量: 3发表: 2013年 加载更多研究点推荐 bare semiconductor dice microbump interconnect bare semicon...
Processes, such as chip grinding, position adjustment and planarity of assembly, the formation of through-silicon via (TSV), and the composition and dimensions of µ-bumps, should be emphasized to improve the functionality of 3D-IC packages. Consequently, the prevention of fracture failure in ...
BroadPak presents at Yole Développement webcast:3D and 2.5D TSV integration, From imaging to deep learning: TSV has found its playground and it’s time to play! BroadPak presents "Heterogeneouse SIP Enabling Deep Learning Applications"at the1st International Conference and Exhibition on System in...
先进封装的四大要素——TSV(硅通孔)、Bump(凸点)、RDL(重布线层)、Wafer(晶圆)——在现代半导体封装中扮演了核心角色。它们在封装工艺中各自承担的功能,从不同维度推动了芯片小型化、集成度和性能的提升。 1. Wafer(晶圆):基础材料和封装载体 Wafer 是先进封装的基础,作为芯片制造的载体和平台。它由高纯度的硅...
Loh, C.K. Ooi, et al., Numerical modeling and analysis of microbump pitch effect in 3D IC package with TSV during molded underfill (MUF), Eng. Appl. Comput. Fluid Mech. 7 (2013) 210-222.E.E.S. Ong, M.Z. Abdullah, C.Y. Khor, W.C. Leong, W.K. Loh, C.K. Ooi, et al...