While the driving force is crack location dependent, the greater crack driving force corresponds to larger underfill CTE and bump radius, but smaller underfill modulus and microbump pitch.doi:10.1557/opl.2011.1263Karmarkar, Aditya P.Xu, Xiaopeng...
In this paper, the microbump pitch effect in molded underfill (MUF) is analyzed in the 3D integrated circuit (IC) package with a through-silicon via by numerical modeling. The current trend of decreasing the microbump pitch could make the MUF process more difficult. However, no detailed ...
Development of a FC/WB stacked die SiP with 100um pitch F2F micro-bump interconnection 来自 Semantic Scholar 喜欢 0 阅读量: 115 作者:C Ng,CK Lam,C Lee 摘要: Flip chip on chip (FCoC) has emerged recently as a potential solution for system integration, because of its excellent electri...
We have developed a 3-D-stacked 16-Mpixel, 3.8-μm pitch, and global shutter (GS) CMOS image sensor with a 2-Mpixel 10 000-frames/s high-speed image-capturing mode, with four million reliable microbump interconnections. This sensor consists of a photodiode (PD) substrate and an in-pi...
Heterogeneous Integration of InP DHBT and Si CMOS by 30μm Pitch Au-In Microbumps. In Proceedings of the 2021 Electron Devices Technology and Manufacturing Conference (EDTM), Chengdu, China, 8–11 April 2021; pp. 1–3. [Google Scholar] [CrossRef] Geum, D.-M.; Kim, S.; Lee, S.;...
Study of 15 μm pitch solder microbumps for 3D IC integration. In Proceedings of the 2009 59th Electronic Components and Technology Conference, San Diego, CA, USA, 26–29 May 2009; pp. 6–10. [Google Scholar] [CrossRef] Suh, D.; Kim, D.W.; Liu, P.; Kim, H.; Weninger, J.A...
BroadPak CEO delivers Keynote address "Advanced 3D Heterogeneous Integration of a 40+ TOP/W AI Core Accelerator" at theInternational Conference on Electronic Packaging Technology (ICEPT 2024).Tianjin, China, August 7-9, 2024 BroadPak presents "Advanced X64 UCIe Interface Implementation on a Substr...
Micro-ball Bump Technology For Fine-pitch Interconnections “Micro-ball Bump Technology for Fine-pitch Interconnections”, Shimokawa K; Tatsumi K; Hashino E; Ohzeki Y; Konda M; Kawakami Y; Conference ... K Shimokawa,K Tatsumi,E Hashino,... - IEEE 被引量: 12发表: 1997年 Apparatus and ...
摘要: , repairs the chip-to-chip connection failure, and supports better testability and improves reliability.关键词: DRAM chips fine-pitch technology logic design logic testing three-dimensional integrated circuits DRAM TSV chip-to-chip connection failure fine-pitch wide I/O high-bandwidth memory ...