12.The device of claim 11, wherein a lateral size of the micro-lens is equal to or greater than 2 times of a lateral size of the front surface of the semiconductor mesa structure. 13.The device of claim 12, wherein:the lateral size of the micro-lens is equal to or smaller than ab...
Figure 1 is a schematic diagram of the AlInGaP red vertical Micro-LED device structure, and its process flow is as follows: (1) AlInGaP epitaxial wafers were grown on n-type lattice-matched GaAs substrates by MOCVD, and then indium tin oxide (ITO) layers for ohmic contact and current diffu...