X-ray diffraction patterns of a 5 渭m thick film indicate that the sample consists of single-phase YBaCuOwhose (001) plane is parallel to the (100) MgO substrate and whose lattice constant c is 1.1703 nm. The Meissner effect was confirmed by measuring the temperature dependence of the ...
单晶MgO基片研磨工艺及其损伤研究--硕士学位论文
31, while the difference in lattice constant on Ag(001) substrate is only 20 K higher than between bulk MnO and Ag can that grown on MnO(001) film. be 8.2%, the TN of CoO Scientific Reports | 6:22355 | DOI: 10.1038/srep22355 4 www.nature.com/scientificreports/ Figure 4. ...
The biaxial texture of the BST component on the MgO substrate has been established with XRD. All as-deposited films had an enlarged BST out-of-plane lattice parameter. A more relaxed lattice constant as well as higher degree of texture has been obtained in the films deposited at higher ...
Theoretical calculations showed that tetragonal lattice distortions induce a change in the population of AFM domains via modulation of the dipolar energy, which dominates the magnetic anisotropy of NiO28. Figure 2 Lattice constant dependence on the MgO thickness in MgO(dMgO)/Cr(200 Å)/MgO(001)...
Finally a complete LNO (111) pole figure was measured and discussed, revealing that the as-grown film was basically high-quality epitaxial film due to similar lattice constant and comparable coefficients of thermal expansion between the film and the substrate and indicating that LNO films can be...
41. To match lattice parameter of MgO substrate of 4.215 Å, 45∘rotation was made around the [001] direction of the bulk structure of conventional quaternary Heusler. The quaternary-Heusler/MgO heterostructure has two types of symmetric interfaces, including\(X{X}^{{\prime} }\)/MgO ...
The lattice constant of rs-ZnO at ambient pressure and temperature is obtained to be 4.2766 Å. The sticking coefficient of Mg atoms on rs-ZMO is approximately four times higher than that of ZnO atoms regardless of the growth temperature in the range of 400–600 °C. 展开 ...
The dielectric constant of the films increased with increasing annealing temperature due to the consistent increase in grain size and crystallinity. The 750 °C annealed, 100 nm thick film indicated a high dielectric constant of 440 at 100 kHz and the lattice constant of 3.986 Å. The ...
Further, a lattice constant of the MgO in the MgO layer of the present invention is slightly smaller than that of a general MgO. Therefore, it can be estimated that Si having a smaller ion radius than Mg exists within MgO lattice. Hereinafter, a method for forming the MgO deposition ...