Bonding analyses of Mg+X (X= Ti, Zr, Hf, Nb) doped AlN by the COHP method K Hirata,H Yamada,SA Anggraini,... - 《Jsap Annual Meetings Extended Abstracts》 被引量: 0发表: 2019年 New quaternary complex borides, Ti9M2Ru18B8 (Cr, Mn, Co, Ni, Cu, Zn): synthesis, crystal ...
The parameters of the technological process, i. e. time and temperature, should have provided for the uniform distribution of particles in the volume of the matrix and for the type of bonding involving no reaction between components.doi:10.1002/3527606165.ch37Andrzej Zyska...
aStacked ultra thin buried oxide type semi-conductor structure producing method, involves bonding substrates such that insulator layers form buried insulator layer, where thickness of buried insulator layer is less than fifty nm 被堆积的超稀薄的被埋没的氧化物类型半导体结构导致方法,介入接合基体这样绝缘...
penetrate the steel base and form a firm bonding surface with the steel base, which prevents corrosion of the steel strip; the surface of the zinc (Zn)-based coating containing magnesium (Mg) will form dense protection Layer, and play the role of anti-corrosion and self-repairing of steel ...
The in-plane N-Ga bond distance (1.966 Å) in the hexagonal phase is slightly shorter than that in the cubic phase (1.968 Å), which means that the Ga-N bonding interaction in the hexagonal phase is stronger than the cubic phase. In terms of band alignment, the VBM of h-GaN lies...
The CCSD(T)/aug-cc-pVTZ interaction energies of this type of σ-hole bonding range from −0.6 to −3.8 kcal mol-1. The stability of XH3Si···HMY complexes is attributed mainly to electrostatic and correlation effects. The nature of tetrel-hydride interaction is analyzed with at...
The interfacial bonding of strip-cast Mg/Al clad sheets should be further improved because they are not strongly bonded. Thus, interfacial reaction phases such as intermetallic cinotmerpfaocuianldbsoonfdγin (gMhga1v7eAnl1o2t) baenednβsu(fMficgi2eAnlt3l)y should be optimally ...
GaN-based resonant cavity light-emitting diodes (RCLEDs) have been successfully fabricated on Si substrate by laser lift-off and wafer bonding techniques. ... SY Huang,RH Horng,WK Wang,... - 《Japanese Journal of Applied Physics》 被引量: 13发表: 2006年 Enhanced Performance of GaN-Based ...
Rahmatabadi D, Pahlavani M, Gholami MD, Marzbanrad J, Hashemi R (2020) Production of Al/Mg-Li composite by the accumulative roll bonding process. J Market Res 9(4):7880–7886 Pahlavani M, Marzbanrad J, Rahmatabadi D, Hashemi R, Bayati A (2019) A comprehensive study on the effect ...
Type Alternator Structure Alternator With PUmp Rectifier Structure Six Tubes Current Level 1(≤19A) Bonding Type of Magnetic Field Winding Inner Bonding Brushless Alternator Type Claw-pole Type Voltage Adjuster Type Electromagnetic Vi...