Method for Producing Compound Thin Films. US Patent 4058430.T. Suntola, J. Antson, Method for producing compound thin films, US Patent no. 4,058,430, 1977.Method for producing compound thin film. T Suntola,J Antson. US Patent . 1977...
A method is provided for growing highly oriented compound thin films on a substrate by subjecting the substrate to the vapor of a first single element which can react with the surface at a temperature sufficiently high for the reaction to occur which forms a single atomic layer of the first ...
A method is provided for growing highly oriented compound thin films on a substrate by subjecting the substrate to the vapor of a first single element which can react with the surface at a temperature sufficiently high for the reaction to occur which forms a single atomic layer of the first ...
Compound semiconductor, a method for producing a thin film thereof, and a semiconductor device having the thin filmChalcopyrite compound semiconductor thin films represented by I-III-VI 2 -x V x or I-III-VI 2 -x VII x , and semiconductor devices having a I-III-VI 2 /I-III-VI 2 -x...
A method for making oriented thin films of a ternary intermetallic compound and such films having a tetragonal structure and generally uniaxial magnetic, optical, electronic, and mechanical properties, as well as a generally lower Curie temperature than oriented binary intermetallic films. The steps of...
Method for producing a group II-VI compound semiconductor thin film and a group II-VI compound semiconductor device A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor...
被引量: 0发表: 2024年 Method for producing semiconductor thin films on foreign substrates The method is suitable in particular for producing highly efficient thin film solar cells. The method is also suitable for high-quality annealing of high-... JP Theis 被引量: 0发表: 2016年 加载更多研究...
A method for fabricating a thin film semiconductor device includes the steps of introducing, into an amorphous film of a semiconductor material, at least one metallic element that forms an intermetallic compound with the semiconductor ma... Y Takizawa - US 被引量: 40发表: 1998年 Organic thin ...
Method for producing multilayer thin film structure, multilayer thin film structure and piezoelectric element provided with same [Problem] To provide: a multilayer structure wherein Pb-containing perovskite oxide films free from cracks are provided on both surfaces of a diaphragm that has a smaller th...
Having high water vapor, oxygen barrier properties and high strength, the silicon oxide or silicon oxy nitride thin productivity advantage of the solution process is obtained by a method and the method for efficiently producing, for example, protective film of the electric element of the organic EL...