This paper describes the implementation of an I‐line photoresist process which was used to build 0.5 and 0.4 μm GaAs metal semiconductor field effect transistor (MESFET) devices with good parametric test results. A new PE/Micrastep I‐line step and repeat system with enhanced air gauge focus...
GaAs MMIC technology applied to signal shaping for high-bit-rate optical communications all implemented as GaAs monolithic microwave integrated circuits (MMICs) to further enhance their applicability to systems that are planned for field ... IZ Darwazeh,PMRS Moreira,JJ O'Reilly - 《Proceedings of ...
Band lineup of pseudomorphic <inline-formula><math><mrow><mi>Ga</mi><msub><mi>As</mi><mrow><mn>1</mn><mo></mo><mi>x</mi></mrow></msub><msub><mi>Sb</mi><mi>x</mi></msub></mrow></math></inline-formula> quantum-well structures with GaAs, GaAsP, and InGaP barriers ...