The metal gate is encapsulated in oxide during a self-aligned siliciding operation. A contact to the silicide- clad source/drain region includes a thin tungsten layer, then the molybdenum/tungstem stack, and a top layer of gold.doi:US4672419 AJames M. McDavid...
At the recent VLSI Symposia, Intel presented three papers discussing PowerVia technology: one on the technology itself, another on the results from a test microprocessor, and a third looking at the possible evolution of PowerVia.
A model is developed to establish the relation between the maximum allowable current with current pulse width for different configurations of metal stack and insulating layers used in the interconnect. The dependence of pulse width versus maximum allowable current density derived here can be used as ...
A record Gm<inf>SAT</inf>/SS<inf>SAT</inf> and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation 2019, Digest of Technical Papers - Symposium on VLSI Technology GaAs wet and Siconi cleaning sequences for an efficient oxide removal 2019, ECS Journal of...
Devices are initially electroformed to a usable resistance range (25 to 200 kΩ, depending on the stack) using consecutive 1 μs pulses of negative polarity ranging from −8 to −12 V in amplitude. A series resistor of 1 kΩ was used as a current-limiting mechanism for all devices....
aSchematic illustration of the hybrid PUF with the printed core substrate mounted onto the control logic printed circuit board (PCB).bZoom in of one PUF core inverter consisting of a resistor-electrolyte-gated transistor-pair.cSchematic EGT top-gate bottom-contact stack structure.dScanning electron...
- International Symposium on Vlsi Technology 被引量: 1发表: 2009年 Cmos method of forming fully silicided metal gate The present invention discloses a method of forming a fully silicided metal gate CMOS, the method comprising: providing a substrate; a gate electrode on sa... 肖海波 被引量:...
Bernard, E., et al., “Novel integration process and performances analysis of Low STandby Power (LSTP) 3D Multi-Channel CMOSFET (MCFET) on SOI with Metal / High-K Gate stack”, 2008 Symposium on VLSI Technology Digest of Technical Papers, pp. 16-17. Cong, J., et al., “Quantitati...
a work-function of a respective MOS device; forming a polysilicon layer over the first metal layer; patterning the first and the second high-k dielectric layers, the first metal layer, and the polysilicon layer to form a first gate stack in the first MOS device region, and a second gate ...
In landmark papers at VLSI 2007 and IEDM 2007, Toshiba presented techniques to construct 3D memories which they called-BiCS. Many of the memory vendors followed that work by variation and alternatives mostly for non-volatile memory applications, such as now being referred to as 3D-NAND. They ...