Furthermore the application in wider operating areas and more challenging mission profiles leads to a concept of highly robust metallization stacks [1] in a metal stack system up to eight levels. These stacks can contain a thick top metallization track for high current or RF application. Looking...
A model is developed to establish the relation between the maximum allowable current with current pulse width for different configurations of metal stack and insulating layers used in the interconnect. The dependence of pulse width versus maximum allowable current density derived here can be used as ...
Devices are initially electroformed to a usable resistance range (25 to 200 kΩ, depending on the stack) using consecutive 1 μs pulses of negative polarity ranging from −8 to −12 V in amplitude. A series resistor of 1 kΩ was used as a current-limiting mechanism for all devices....
A record Gm<inf>SAT</inf>/SS<inf>SAT</inf> and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation 2019, Digest of Technical Papers - Symposium on VLSI Technology GaAs wet and Siconi cleaning sequences for an efficient oxide removal 2019, ECS Journal of...
- International Symposium on Vlsi Technology 被引量: 1发表: 2009年 Cmos method of forming fully silicided metal gate The present invention discloses a method of forming a fully silicided metal gate CMOS, the method comprising: providing a substrate; a gate electrode on sa... 肖海波 被引量:...
aSchematic illustration of the hybrid PUF with the printed core substrate mounted onto the control logic printed circuit board (PCB).bZoom in of one PUF core inverter consisting of a resistor-electrolyte-gated transistor-pair.cSchematic EGT top-gate bottom-contact stack structure.dScanning electron...
3b.Metal-gate/High-KDielectricStack MetalgateelectrodesmaybemoreeffectivethanpolySi inscreeningthehigh-KSOphononsfromcouplingto thechannelunder inversion conditions, resulting in improved channel mobility [7-8]. However, the use of high-K/metal-gate require a n-type metal and a p-type ...
,The use of MG HK presents the biggest change in gate stack in the last decade and thus requires thorough rel iabi lity investigations Conventional Gate-firstG/HK Poly-Sioly-SiiO2,SiONi D MG/HK Metal gatenterfacial layeri Poly-Siigh-k D ...
Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance M. Denais et al. Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2-nm gate oxide T. Grasser et al. Recent advances in understa...
Also, it is found that a tri-metal gate nanowire MOSFET with gate stack provides high performance in analogue and RF application [31]. Moreover, a simplified compact model, comprising quantum effects for cylindrical nanowire MOSFET was developed by Ragi et al. [32], which reduces the ...