The dependences of the resistivity for metal oxide films based on tin dioxide are measured in the temperature range 200400°C. The distribution of phases in the samples prepared is examined using electron probe X-ray microanalysis. It is shown that the specific features in the temperature ...
MetalWeek MetalResistivity Resistivity Announcements Announcements MatE 153, Dr. Gleixner ReviewReview LastTime’s Equations LastTime’s Equations driftvelocity? What driftvelocity? driftmobility? What driftmobility? driftWhat driftmobility? mobility? MatE 153, Dr. Gleixner TemperatureDependence TemperatureDepe...
For the immediate vicinity of the metal-insulator transition (MIT), data on the dependence of the resistivity rho on the charge carrier concentration n from an Si MOSFET experiment by Kravchenko et al. and from an AlAs quantum well study by Papadakis and Shayegan are reanalyzed. In both ...
摘要: Single-crystal X-ray measurements show a shearing of the unit cell of (TMTSF)2ReO4 in the ab plane at the 180K metal-insulator transition. The authors report the temperature dependence of the principal coefficients of thermal expansion between 100 and 300K. At room temperature they find...
Owing to of copper lower resistivity that has been considered as an interconnection material for ultra-large-scale integration (ULSI) devices. Also, copper is used intensively as a bonding layer in hetero-structures. Furthermore, depending on the situation of copper, the copper oxide (CuO) is ...
The dependence of TMIT and ρ(300 K) on film thickness and surface termination is shown in Fig. 2b, c, respectively. In general, both parameters increase with decreasing LaNiO3 film thickness except that the MIT temperature and resistivity of the 2 u.c. film are lower than the 2.5 ...
Even though the crystalline material is a degenerate semiconductor, its temperature dependence of the resistivity shows a non-metallic behavior. Stepwise annealing to higher temperatures changes the temperature coefficient of the resistivity from negative to positive, indicative of a metal-insulator ...
Temperature and polarization dependence of extended x-ray absorption fine-structure spectra. Phys. Rev. B 14, 1514 (1976). Article ADS CAS Google Scholar Lin, Y. F. et al. Nanocontact resistance and structural disorder induced resistivity variation in metallic metal-oxide nanowires. ...
an excellent Ohmic contact may be formed by adequately engineering the surface states of the semiconductor. The specific contact resistivity, ρc(unit Ω-cm2), is nowadays used to analyze the performance of the Ohmic contacts as it does not depend on the contact geometry and only corresponds to...
The temperature dependence of resistivity ρ of YSZ doping composite of (1-x)La0.67Ca0.33MnO3 + xYSZ and Y2O3 doping composite of (1-y)La0.67Ca0.33MnO3 + yY2O3 is investigated, respectively, in a temperature range 77-300?K, where the YSZ represents yttria-stabilized zirconia (8?mol%Y2...