XU YanTAI FeiGONG JiangFengZOU HuaZHU WeiHua科学通报:英文版InGaN metal-insulator-semiconductor photodetector using Al 2 O 3 as the insulator[J] . KaiXiao Zhang,AiBin Ma,JingHua Jiang,Yan Xu,Fei Tai,JiangFeng Gong,Hua Zou,WeiHua Zhu.Science China Technological Sciences . 2013 (3)...
The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio c...
High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer In this study, gallium nitride (GaN)-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a gallium oxide (GaO(x)) gate lay... ML Lee,TS Mue,FW Huang,...
Metal halide perovskite photodetectors Juan P.Martínez-Pastor, inMetal Halide Perovskites for Generation, Manipulation and Detection of Light, 2023 4.2Metal-semiconductor and metal-insulator-semiconductor junctions The key step in the development of the photodetector technologies described in next sections ...
Averin, S.V., Kuznetzov, P.I., Zhitov, V.A., Zakharov, L.Y., Kotov, V.M., Alkeev, N.V.: Electrically tunable spectral responsivity in metal-semiconductor-metal photodetectors based on low-dimensional ZnCdS/ZnMgS/GaP, ZnCdS/ZnS/GaP heterostructures. Solid State Electron.114, 135–140...
4H-SiC-based metal–insulator–semiconductor (MIS) ultraviolet (UV) photodetectors with thermally grown $hbox{SiO}_{2}$ and evaporated $hbox{Al}_{2}hbox{O}... Zhang, F,Sun, G,Huang, H,... - 《Electron Device Letters, IEEE》 被引量: 4发表: 2011年 加载更多来源...
Molecular beam epitaxy grown 0.5-/spl mu/m and 2.0-/spl mu/m thick undoped ZnSe on semi-insulating [100] GaAs substrates were prepared for metal-semiconductor-metal (MSM) photodetector devices. The MSM photodetectors consisted of interdigitated metal fingers with 2, 3, and 4 /spl mu/m wi...
on Simulation of Semiconductor Processes and Devices, Piscataway NJ (USA) , 151–154 (2005). 27. An, Y., Behnam, A., Pop, E. & Ural, A. Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions. Appl. Phys. Lett. 102, 013110-1-5 (2013). 28. ...
et al. Laser-thinning of MoS2: on demand generation of a single-layer semiconductor. Nano Lett. 12, 3187–3192 (2012). CAS Google Scholar Coleman, J. N. et al. Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science 331, 568–571 (2011). CAS Google ...
GaN-based metal-insulator-semiconductor- insulator-metal (MISIM) photodiodes using three kinds of high-k dielectrics (Al2O3, HfO2, and ZrO2) were fabricated, and their electrical, photo response, and noise properties were characterized. The GaN MISIM photodiode using ZrO2 showed the lowest ...