Metal‐Insulator‐Semiconductor Capacitorsmetal‐oxide silicon (MIS) capacitormetal‐insulator‐semiconductor capacitorideal MIS capacitance curveshigh frequency capacitanceoxide chargesThis chapter contains sections titleddoi:10.1002/9780470068328.ch4Sze, S.M....
We have fabricated 3 μm gate length self‐aligned, depletion mode GaAs metal insulator semiconductor field effect transistors exhibiting transconductances, typically in the vicinity of 160 mS/mm. This achievement is attributed to the use of Si3N4as the gate dielectric with a few monolayers of a...
metal oxide semiconductor memory 【计】 金属氧化物半导体存储器 相似单词 semiconductor n. 半导体 insulator n. 隔热(或绝缘体、隔音等的)材料(或装置) METAl 金属;合金[C][U] metal n. 1.金属;合金 2.[metals]钢轨 3.玻璃液 4.筑路碎石 5.气质;本质;勇气 6.活字合金;铅字 7.总炮数;坦克 8...
必应词典为您提供metal-insulator-semiconductor的释义,un. 金属隔离半导体; 网络释义: 金属-绝缘体-半导体;金绝半元件;
Metal of a semiconductor device of the present invention-insulator-metal capacitors, coplanar with the first bottom metal layer pattern disposed so as to be spaced apart from each other in phase, and the second lower metal film pattern on the lower insulating film, a first lower metal layer pa...
Metal-insulator-metal (MIM) capacitors 优质文献 相似文献 参考文献 引证文献TRENCH METAL-INSULATOR-METAL (MIM) CAPACITORS AND METHOD OF FABRICATING SAME The present invention relates to a semiconductor device that contains a trench metal-insulator-metal (MIM) capacitor and a field effect transistor (FE...
METAL INSULATOR SEMICONDUCTOR (MIS) TYPE CAPACITAN 专利名称：METAL INSULATOR SEMICONDUCTOR (MIS) TYPE CAPACITANCE 发明人：MIYAUCHI KATSUMI,SUSA KENZO,MUKAI KIICHIRO,ITO YOKICHI 申请号：JP19446887 申请日：19870805 公开号：JPS6387772A 公开日：19880419 专利内容由知识产权出版社提供 摘要：PURPOSE:To improve...
More particularly, the present invention relates to the formation of metal-insulator-metal capacitors. 2. Related Art Advances in semiconductor manufacturing technology have led to the integration of millions of circuit elements, such as transistors, on a single integrated circuit (IC). In order ...
A capacitor is provided for integration with a MOSFET device(s) formed on the same substrate. The capacitor comprises a first plate including a doped semiconductor layer of a first
A method to formSiO2/SiCmetal–oxide–semiconductor structures by oxidation of a thin polycrystalline silicon (polysilicon) layer deposited on SiC is demonstrated. The oxidation time used is sufficient to oxidize all the polysilicon while short enough at 1050°C to insure insignificant oxidation of th...