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Conductive graphitic channel in graphene oxide-based memristive devices. Adv. Funct. Mater. 2016, 26, 7406-7414. [CrossRef]S.K. Kim, J.Y. Kim, B.C. Jang, M.S. Cho, S.-Y. Choi, J.Y. Lee, et al., Conductive graphitic channel in graphene oxide-based memristive devices, Adv. ...
Memristive devices based on graphene oxide Memristors are nanoscale devices able to generate intense fields by the application of relatively low voltages, which warrants peculiar properties such as fast, non-volatile ...
Titanium dioxide memristive devices have been non-destructively characterized using x-ray absorption spectromicroscopy and TEM. These techniques allow dire... John,Paul,Strachan,... - 《Advanced Materials》 被引量: 300发表: 2010年 Synaptic behaviors and modeling of a metal oxide memristive device Na...
Flexible Memristive Devices Based on Graphene Quantum-Dot Nanocomposites Artificial neural networks(ANNs)are attracting attention for their high performance in various fields,because increasing the network size improves its func... SW Hwang,DK Hong - 计算机,材料和连续体(英文) 被引量: 0发表: 2022年...
We have achieved programmable conductance in graphene field effect transistor (GFET) devices similar to that seen in oxide-based memristors. To fabricate the GFETs, large-area chemical vapor deposition (CVD) grown graphene was transferred onto a 50 nm alumina (Al2O3) substrate, which acts as...
memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be...
The International Roadmap for Devices and Systems (IEEE, 2021); https://irds.ieee.org/editions/2021. Goossens, S. et al. Broadband image sensor array based on graphene–CMOS integration. Nat. Photon. 11, 366–371 (2017). Article CAS ADS Google Scholar Lin, Y. et al. Wafer-scale gra...
A memristor is a resistive device with an inherent memory. The theoretical concept of a memristor was connected to physically measured devices in 2008 and since then there has been rapid progress in the development of such devices, leading to a series of
(more than 1 µm2) devices on unfunctional SiO2–Si substrates. Some studies have integrated monolayer graphene on silicon microchips as a large-area (more than 500 µm2) interconnection3and as a channel of large transistors (roughly 16.5 µm2) (refs.4,5), but in all cases ...