Figure 5.21.Circuit diagram for a DRAM cell. We can compare DRAM and SRAM on several characteristics as shown inTable 5.4: DRAM is denser (more bits per unit area) and uses less energy; SRAM is faster. These characteristics lead us to use DRAM and SRAM for different purposes in different...
Fig. 4. The concept of vertical NAND using stacked surrounding gate transistor (SGT) memory cell. (a) Bird's eye view of the SGT cell. (b) The cross-sectional view along A-A plane. (c) The equivalent circuit of an NAND string of stacked SGT cells. (d) The proposed 3D memory arra...
2 during testing of a matrix cell that is replaced with a redundant cell. [0017] [0018] FIG. 5 is a schematic diagram of another embodiment of the cloak control circuit of FIG. 2. [0018] [0019] FIG. 6 is a schematic block diagram of an embodiment of a memory circuit that includes...
(DC) I-V tests were carried out. Both RRAMs were tested in the form of 1T1R cell, and the results are shown in Fig.2e. The Ta2O5-based RRAM exhibited an abrupt resistive switching in the set and reset processes with a large on/off ratio of HRS/LRS > 300, which is favorable...
power supply to be supplied to the memory cell array and the second power supply provided to the result holding circuit are independent;It is characterized by including a power supply control circuit for interrupting the first power supply in a state providing the second power supply.Diagram北野...
Cell clustering, cell type identification, and gene expression analyses were executed with the Seurat R package and custom scripts. Normalized and integrated datasets were scaled by regressing for age, sex, epilepsy duration, batch, version of 10× chemistry, percent mitochondrial transcripts, and UMI...
A memory cell circuit is provided with a plurality of cells arranged in rows and columns. Each cell comprises a pair of cross-coupled transistors with the collector of each transistor direct-coupled to the base of the other transistor Each transistor has a pair of emitters. One emitter of eac...
FIG. 2 is a cross sectional view of a BIC cell; FIG. 3A is a cross sectional view of a PROM cell, and FIG. 3B is an equivalent circuit diagram of the PROM cell shown in FIG. 3A; FIG. 4 is a basic diagram of a semiconductor memory circuit according to the present invention; ...
A memory cell circuit for a CMOS static RAM is provided, which includes a latch portion for holding logic high or logic low data depending on the potential of a single bit line, and a transfer gate ha
FIG. 1 is a block diagram showing an example of a functional configuration of a storage device equipped with a memory cell array according to this embodiment; FIG. 2 is a circuit diagram showing an example of a configuration of main parts of the memory cell array according to this embodiment...