US6825073 2003年9月17日 2004年11月30日 Chip Integration Tech Co., Ltd. Schottky diode with high field breakdown and low reverse leakage currentUS6825073 * Sep 17, 2003 Nov 30, 2004 Chip Integration Tech Co., Ltd. Schottky diode with high field breakdown and low reverse leakage current...
A Schottky diode structure with low reverse leakage current and low forward voltage drop has a first conductive material semiconductor substrate combined with a metal layer. An oxide layer is formed around the edge of the combined conductive material semiconductor substrate and the metal layer. A plu...
- Super fast reverse recovery time - Low leakage current - Low switching losses, high efficiency - High forward surge capability - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - Part no. with suf...
The leakage suppression MOS field plate is deployed on the etched upper GaN channel layer after a barrier fully-recess process, leading to a low reverse OFF-state leakage current of −20 nA/mm (at −100 V). The drain metal is deployed adjacent to the MOS field plate, contacting the ...
A silicon carbide photodiode exhibiting high short-wavelength sensitivity, particularly in the ultraviolet spectrum, and very low reverse leakage current includes a p type conductivity 6H crystalline substrate. A first p- silicon carbide... DM Brown,JA Edmond - US 被引量: 117发表: 1995年 Performa...
is an order of magnitude (or 12 times) smaller (the inset of Fig.1a). Figure3eshows theI–Vcharacteristics of the Type B diode, showing much improved DC properties compared with those of the Type A device: three orders of magnitude lower reverse leakage current (110 fA) and two order ...
low reverse leakage current • Initial accuracy: 1% • Overall accuracy over line, load, and temperature – Legacy silicon: 3% – New silicon: 1.5% • Less than 20nA typical IQ in shutdown mode • Thermal shutdown and current limit for fault protection • Available in multiple ...
It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1.3 A/mm with a pinchoff leakage current below 20 μA/mm and a record ...
a 90% reduction in static leakage in AH pMOS transistor because of reduced band-to-band tunneling current in the reverse biased drain-substrate junctions... A Bansal,K Roy - 《IEEE Transactions on Electron Devices》 被引量: 55发表: 2005年 Temperature effect on hetero structure junctionless tunn...
Leakage current reduction in asymmetric transformerless cross-switched reverse connected voltage sources X10 multilevel inverter for photovoltaic application Cascaded multilevel inverters render higher output voltage, allowing for grid power injection without the use of booster transformers. Large leakage curren...