A 4 . 5kV-HVIGBT Module Family with Low Collector-Emitter Saturation VoltageIwamoto, HMochizuki, KIshii, KMerfert, IThrough, Punch
High Breakdown Voltage: The BF423 F423 PNP Silicon Transistors are engineered to withstand high breakdown voltages, ensuring reliable performance in a range of applications. Low Collector-Emitter Saturation Voltage: These transistors exhibit a low collector-emitter saturation voltage, which translates to ...
Low collector-emitter saturation voltage Integrated antiparallel collector-emitter diode Read moreRead less Featured Products Darlington transistors Discover our Darlington transistor portfolio available with a voltage range up to 400 V, with both NPN and PNP polarity....
特徴 Low collector-emitter saturation voltage Integrated antiparallel collector-emitter diode 推奨製品 Darlington transistors Discover our Darlington transistor portfolio available with a voltage range up to 400 V, with both NPN and PNP polarity.採用...
50 V; 3 A NPN low VCEsat transistor NPN low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T Download datasheet Order product Features and benefits Low collector-emitter saturation voltage VCEsatand corresponding low RCEsat ...
Collector Current(IC)−500mA/-0.5A 截止频率fT Transtion Frequency(fT)100MHz 直流电流增益hFE DC Current Gain(hFE)100 管压降VCE(sat) Collector-Emitter SaturationVoltage-250mV/-0.25V 耗散功率Pc PoWer Dissipation330mW/0.33W Description & ApplicationsPNP Silicon AF Transistor • Low collector-emitt...
Collector Current 0.25 0.20 IC/IB = 100 0.15 150C 0.10 0.05 VCE(sat) = −55C 25C 0 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 575 525 475 425 375 325 275 225 175 125 0.001 150C (5 V) ...
FZT649 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.Absolute Maximum Ratings* Page 1 of 2 © 1998 Fairchild Semiconductor Corporation fzt649.lwpPrNC 7/10/98 revB C E C B SOT-223 FZT64...
Collector Current(IC)1A 截止频率fT Transtion Frequency(fT)280MHz 直流电流增益hFE DC Current Gain(hFE)200~500 管压降VCE(sat) Collector-Emitter Saturation Voltage160mV/0.16V 耗散功率Pc Power Dissipation800mW/0.8W Description & ApplicationsSilicon NPN Epitaxial Planer Low Frequency Power Amplifier Featu...
book, halfpage M3D088 PBSS4350T 50 V low VCEsat NPN transistor Product specification 2002 Aug 08 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX....