a. A formation in which elements, such as troops, tanks, or ships, are arranged abreast of one another. b. The battle area closest to the enemy; the front. c. The combat troops or warships at the front, arrayed for defense or offense. d. The regular forces of an army or a navy,...
Thus the activity of both de novo thymidine and purine pathways must be important in determining the effect of the drug on nucleotide synthesis and may vary from cell to cell. Analysis of the mechanism for biochemical resistance should allow the development of combination drug therapy to overcome ...
if you're not on the pages of your glossy magazine oh no at the line of least resistance it's the place that we will fall you fight for your existence when your back is to the wall can you go the distance when the odds are small at the line of least resistance will you rise or...
A 'Line Parameter' refers to the characteristics of a transmission line that can vary with the frequency of the voltage or current waveforms, such as series resistance, inductance, shunt conductance, and capacitance. AI generated definition based on: International Journal of Electrical Power & Energy...
Our story today is called "The Line of Least Resistance.” It was written by Edith Wharton. Here is Larry West with the story. Mister Mindon returned home for lunch. His wife Millicent was not at home. The servants did not know where she was. ...
Star Wars: Rise of the Resistanceat Disneyland Park Or, purchase Lightning Lane Single Passes for both!Park entry requirements apply. Purchasing a Single Pass Upon entering a theme park, you can use the Disneyland app to purchase a Lightning Lane Single Pass for a top attraction and get the...
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θr= line length effect or Ferranti effect at the end of the line, in degrees I1= load current p−JQV0 P= active load Q= reactive load Ro= line resistance per phase. It has been ignored and the line is considered lossless
To model the transmission line with fully distributed parameters, the line is separated into infinite number of sections, where each section is with the infinitesimal length of dx. The example section with length dx at location x is shown in the figure. The series resistance matrix, series ...
They propose an interaction between stacked DRAM design and process called the bridge-gap process for achieving low digit-line resistance while minimizing overall process complexity. A study of digit-line resistance as a function of word-line gap and digit-line poly-Si thickness indicates that ...