This is particularly true of surfaceemitting LEDs, which have a radiance of the same order of magnitude as tungsten filaments. Edge-emitting LEDs and related structures can have higher radiances. The emission area in an edge-emitting diode laser is measured in square micrometers, but the ...
Light-emitting diodes based on halide perovskites have undergone rapid development in recent years and can now offer external quantum efficiencies of over 23%. However, the practical application of such devices is still limited by a number of factors, in
Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A
(p-phenylene vinylene), prepared by way of a solution-processable precursor, can be used as the active element in a large-area light-emitting diode. The combination of good structural properties of this polymer, its ease of fabrication, and light emission in the green–yellow part of the ...
[ 9–17 ] Recently, room-temperature per- ovskite electroluminescence (EL) was reported in light-emitting diode (LED) structures. [ 18 ] However, the performance of the perovskite light-emitting diodes (PeLEDs) remains modest due to incomplete surface coverage of perovskite fi lms and the ...
光激发二极管Light-emitting diode (LED)
346 nm emission from AlGaN multi-quantum-well light emitting diode. Phys. Status Solidi a 176, 45–48 (1999). ADS Google Scholar Otsuka, N. et al. Room temperature 339 nm emission from Al0.13Ga0.87N/ Al0.10Ga0.90N double heterostructure light-emitting diode on sapphire substrate. Jpn J...
As a residue-free physical sterilization and preservation method, light-emitting diode (LED) treatment, has recently been applied for postharvest storage of fruits and vegetables by numerous researchers. This paper reviews the recent applications of LEDs in postharvest storage of fresh produce, ...
M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).Wong W S, Sands T, Cheung N W, Kneissl M, Bour D P, Mei P, Romano L T and Johnson N M 1999 Fabrication of thin-film InGaN light-...
20040124422Light-emitting diode2004-07-01Sakamoto et al. 20020105080Method of forming an electronic device2002-08-08Speakman257/749 Foreign References: JP62232943October, 1987SUBSTRATE MATERIAL FOR SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF JP08139189May, 1996MANUFACTURE OF SEMICONDUCTOR DEVICE ...