The software PARTS of PSpice can generate SPICE models from the data sheet parameters of transistors and diodes. The transit time τT can be calculated approximated from We shall assume the typical value CJO = 2PF. Thus, the PSpice model statement is .MODEL DMODD (IS=2.22E−15 BV=1200...
In a real transistor, the channel potential depends additionally on the back-gate and the drain junction. Drain control is minimized by using long channel transistors, or by minimizing the drain junction depth. In practice, it's convenient to assume that the threshold voltage varies ...
Note Collector – base junction becomes forward biased – charge floods into collector region from the base High recombination occurs in collector fed by base current – current gain falls Large increase in stored charge slows switching time 10 Typical transistor Input (base – emitter) ...
EE2005-Lecture10-CMOS-Logic-Gates
Lecture6
※FrequencyMixersaremadewithbothactiveandpassivedevices.Activemixersaredesignedusingtransistorswhilepassivemixersaredesignedusingfastswitchingdiodes.February2008※Byfar,passivemixersarethemostwidelyusedinmanymicrowaveapplicationsduetoitsfavorablecharacteristicsascomparedtoactivemixers.Page2 TheWorld‘sPremierMeasurementCompany R...
ELEC5616_Computer And Network Security_2014 Semester 1_CNS_Lecture_21
See Section 1.7 for more information on transistors. V_{DD}代表金属氧化物半导体晶体管漏极上的电压,这种晶体管用于制造大多数现代芯片。电源电压有时也被称为V_{CC},代表在旧技术中用于制造芯片的双极晶体管集电极上的电压。Groundth有时被称为V_{SS},因为它是金属氧化物半导体晶体管电源上的电压。有关...